BUK7909-75AIE中文資料安世數(shù)據(jù)手冊PDF規(guī)格書

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. The devices include TrenchPLUS current sensing

and diodes for ElectroStatic Discharge (ESD) protection. This product has been designed

and qualified to the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

Electrostatically robust due to

integrated protection diodes

Low conduction losses due to low

on-state resistance

Q101 compliant

Reduced component count due to

integrated current sensor

Suitable for standard level gate drive

sources

1.3 Applications

Electrical Power Assisted Steering

(EPAS)

Variable Valve Timing for engines