BUK7Y54-75B中文資料安世數(shù)據(jù)手冊PDF規(guī)格書

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This

product has been designed and qualified to the appropriate AEC standard for use in

automotive critical applications.

1.2 Features and benefits

Q101 compliant

Suitable for standard level gate drive

sources

Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

12 V, 24 V and 42 V loads

Automotive systems

DC-to-DC converters

General purpose power switching

Solenoid drivers