零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
N-channel TrenchMOS logic level FET 1.1Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits ?L | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
TrenchMOS logic level FET | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-channel TrenchMOS logic level FET | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
7A,-200V,0.720Ohm,RadHard,P-ChannelPowerMOSFETs Description IntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessrangi | Intersil Intersil Corporation | Intersil | ||
7A,-200V,0.720Ohm,RadHard,P-ChannelPowerMOSFETs Description IntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessrangi | Intersil Intersil Corporation | Intersil | ||
7A,-200V,0.720Ohm,RadHard,P-ChannelPowerMOSFETs Description IntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessrangi | Intersil Intersil Corporation | Intersil | ||
7A,-200V,0.735Ohm,RadHard,P-ChannelPowerMOSFETs Description IntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessrangi | Intersil Intersil Corporation | Intersil | ||
7A,-200V,0.735Ohm,RadHard,P-ChannelPowerMOSFETs Description IntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessrangi | Intersil Intersil Corporation | Intersil | ||
7A,-200V,0.735Ohm,RadHard,P-ChannelPowerMOSFETs Description IntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessrangi | Intersil Intersil Corporation | Intersil | ||
PChannelPowerMOSFET | GSG Gunter Seniconductor GmbH. | GSG | ||
TRANSISTORSP-CHANNEL(Vdss=-200V,Rds(on)=0.5ohm,Id=-11A) REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORS THRU-HOLE(TO-204AA/AE) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-st | IRF International Rectifier | IRF | ||
P-CHANNELPOWERMOSFET FEATURES ?P–CHANNELPOWERMOSFET ?HIGHVOLTAGE ?INTEGRALPROTECTIONDIODE ?AVAILABLEINTO-3(TO-204AA)ANDCERAMICSURFACEMOUNTPACKAGES | SEME-LAB Seme LAB | SEME-LAB | ||
P-CHANNELPOWERMOSFETS FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
-11A,-200V,0.500Ohm,P-ChannelPowerMOSFET -9Aand-11A,-150Vand-200VrDS(on)=0.5Ωand0.7Ω Features: ■Singlepulseavalancheenergyrated ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance | Intersil Intersil Corporation | Intersil | ||
P??HANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
P-CHANNELPOWERMOSFETS FEATURES ?LowRDS(on) ?ImprovedInductiveruggedness ?Fastswitchingtimes ?Ruggedpolysllicongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
P-CHANNELPOWERMOSFETS FEATURES ?LowRDS(on) ?ImprovedInductiveruggedness ?Fastswitchingtimes ?Ruggedpolysllicongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
P??HANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB |
詳細(xì)參數(shù)
- 型號:
BUK9240
- 制造商:
NXP Semiconductors
- 功能描述:
MOSFET N CH 100V 33A SOT428
- 功能描述:
MOSFET, N CH 100V 33A SOT428
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
NXP(恩智浦) |
23+ |
標(biāo)準(zhǔn)封裝 |
17048 |
全新原裝正品/價格優(yōu)惠/質(zhì)量保障 |
詢價 | ||
NXP/恩智浦 |
24+ |
標(biāo)準(zhǔn) |
45912 |
熱賣原裝進(jìn)口 |
詢價 | ||
NXP(恩智浦) |
23+ |
N/A |
12000 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
NXP/恩智浦 |
24+ |
TO-252 |
504337 |
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢價 | ||
NXP |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
PH |
24+ |
SOT428TO-252 |
8866 |
詢價 | |||
NXP |
23+ |
SOT25 |
7750 |
全新原裝優(yōu)勢 |
詢價 | ||
NXP |
2020+ |
TO-252 |
985000 |
100%進(jìn)口原裝正品公司現(xiàn)貨庫存 |
詢價 | ||
NXP |
2018+ |
TO252 |
6528 |
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心 |
詢價 | ||
NXP |
19+ |
TO-252 |
66941 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢價 |
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