BUK9607-30B中文資料安世數(shù)據(jù)手冊PDF規(guī)格書

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

Low conduction losses due to low

on-state resistance

Q101 compliant

Suitable for logic level gate drive

sources

Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

12 V loads

Automotive systems

General purpose power switching

Motors, lamps and solenoids