BUK9V13-40H中文資料安世數據手冊PDF規(guī)格書

1. General description

Dual, logic level N-channel MOSFET in an LFPAK56D package

(half-bridge configuration), using Trench 9 TrenchMOS technology. This

product has been designed and qualified to AEC-Q101.

An internal connection is made between the source (S1) of the highside

FET to the drain (D2) of the low-side FET, making the device ideal

to use as a half-bridge switch in high-performance automotive PWM

applications.

aaa-028081

D1

S1, D2

S2

G1

G2

2. Features and benefits

? LFPAK56D package with half-bridge configuration enables:

? Reduced PCB layout complexity

? PCB shrinkage through reduced component footprint for 3-phase motor drive

? Improved system level Rth(j-amb) due to optimized package design

? Lower parasitic inductance to support higher efficiency

? Footprint compatibility with LFPAK56D Dual package

? Advanced AEC-Q101 grade Trench 9 silicon technology:

? Low power losses, high power density

? Superior avalanche performance

? Repetitive avalanche rated

? LFPAK copper clip packaging provides high robustness and reliability

? Gull wing leads support high manufacturability and Automated Optical Inspection (AOI)

3. Applications

? 12 V automotive systems

? Powertrain, chassis, body and infotainment applications

? Brushless or brushed DC motor drive

? DC-to-DC systems

? LED lighting