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BUL128D

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Cpackage ·Highvoltage,highspeed ·Integratedantiparallelcollector-emitterdiode APPLICATIONS ·Designedforuseinlightingapplicationsandlowcostswitch-modepowersupplies.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

BUL128D

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisd

TGS

Tiger Electronic Co.,Ltd

BUL128D

SiliconNPNPowerTransistor

EATURES ·Collector–EmitterSustainingVoltage :VCEO(SUS)=400V(Min.) ·LowCollectorSaturationVoltage :VCE(sat)=0.7V(Max)@IC=0.5A ·VeryHighSwitchingSpeed DESCRIPTION ·Designedforuseinlightingapplicationsandlowcost switch-modepowersupplies.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

BUL128DB

iscSiliconNPNPowerTransistor

DESCRIPTION ?Collector–EmitterSustainingVoltage :VCEO(SUS)=400V(Min.) ?LowCollectorSaturationVoltage :VCE(sat)=0.7V(Max)@IC=0.5A ?VeryHighSwitchingSpeed APPLICATIONS ?Designedforelectronicballastsforfluorescentlighting.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

BUL128D-B

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BUL128D-B

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BUL128FP

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BULB128

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMulti-EpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BULB128D

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BULK128

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA.Thedeviceisdesign

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BULK128

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BULK128

Highvoltagefast-switchingNPNpowertransistor

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BULK128D

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA.Thedeviceisdesign

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BULK128D-B

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA.Thedeviceisdesign

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

CDBH128

SMDPowerInductor

SUMIDASumida America Components Inc.

勝美達(dá)電子

CDBM128

POWERINDUCTORS

SUMIDASumida America Components Inc.

勝美達(dá)電子

CDRR128

SMDPowerInductor

SUMIDASumida America Components Inc.

勝美達(dá)電子

CEE128

GeneralPowerTransformerType:CEE>Series>

SUMIDASumida America Components Inc.

勝美達(dá)電子

CEI-128

CEI-128,CEE156

SUMIDASumida America Components Inc.

勝美達(dá)電子

CEI-128

GeneralPowerTransformerType:CEI>Series>

SUMIDASumida America Components Inc.

勝美達(dá)電子

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST/意法
2023+原裝正品現(xiàn)貨
TO-220
9800
AI智能識(shí)別、工業(yè)、汽車(chē)、醫(yī)療方案LPC批量及配套一站
 詢(xún)價(jià)
ST/意法
23+
TO-220
10000
公司只做原裝正品
 詢(xún)價(jià)
ST
22+
TO-220
6000
十年配單,只做原裝
 詢(xún)價(jià)
ST/意法
22+
TO-220
8900
英瑞芯只做原裝正品!!!
 詢(xún)價(jià)
ST/意法
23+
TO-220
9990
原裝正品，支持實(shí)單
 詢(xún)價(jià)
ST
22+
TO-220
7600
全新原裝品牌專(zhuān)營(yíng)
 詢(xún)價(jià)
ST/意法半導(dǎo)體
22+
TO-220
25000
只做原裝進(jìn)口現(xiàn)貨,專(zhuān)注配單
 詢(xún)價(jià)
ST
23+
TO-220
15000
正品原裝貨價(jià)格低qq:2987726803
 詢(xún)價(jià)
ST/意法半導(dǎo)體
22+
TO-220
25000
只做原裝進(jìn)口現(xiàn)貨,專(zhuān)注配單
 詢(xún)價(jià)
ST
24+
TO-TO-220
63660
獨(dú)立分銷(xiāo)商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
 詢(xún)價(jià)
更多BUL128A-CN供應(yīng)商 更新時(shí)間2024-4-11 18:15:00

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