BULD25DR中文資料POINN數(shù)據(jù)手冊(cè)PDF規(guī)格書
BULD25DR規(guī)格書詳情
description
The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of switching transistors has tightly controlled storage times and an integrated fast trr anti-parallel diode. The revolutionary design ensures that the diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel diode plus transistor.
● Designed Specifically for High Frequency Electronic Ballasts
● Integrated Fast trr Anti-parallel Diode, Enhancing Reliability
● Diode trr Typically 500 ns
● New Ultra Low-Height SOIC Power Package
● Tightly Controlled Transistor Storage Times
● Voltage Matched Integrated Transistor and Diode
● Characteristics Optimised for Cool Running
● Diode-Transistor Charge Coupling Minimised to Enhance Frequency Stability
● Custom Switching Selections Available
● Surface Mount and Through-Hole Options
產(chǎn)品屬性
- 型號(hào)：
BULD25DR
- 制造商：
POINN
- 制造商全稱：
Power Innovations Ltd
- 功能描述：
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
22+ |
TO-251 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價(jià) | ||
ST/意法 |
23+ |
NA/ |
50000 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價(jià) | ||
ST |
24+ |
TO-251 |
65300 |
一級(jí)代理/放心購(gòu)買! |
詢價(jià) | ||
ST |
23+ |
TO-251 |
8795 |
詢價(jià) | |||
ST |
24+ |
TO-251 |
3000 |
全新原裝環(huán)保現(xiàn)貨 |
詢價(jià) | ||
ST |
TO-251 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
ST |
08+ |
TO-251 |
36258 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
ST |
24+ |
IPAKTO-251 |
8866 |
詢價(jià) | |||
ST |
22+ |
TO-251 |
40093 |
原裝正品現(xiàn)貨 |
詢價(jià) | ||
ST |
2023+ |
TO-251 |
3557 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價(jià) |
