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BX3055

RF AMPLIFIER MODEL

APITECH

API Technologies Corp

CEA3055

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ?60V,3.7A,RDS(ON)=100mΩ@VGS=10V. RDS(ON)=120mΩ@VGS=4.5V. ?HighdensecelldesignforlowRDS(ON) ?Ruggedandreliable. ?SOT-89Package

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEA3055

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

CEA3055L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ?60V,3.7A,RDS(ON)=100mΩ@VGS=10V. RDS(ON)=120mΩ@VGS=4.5V. ?HighdensecelldesignforlowRDS(ON) ?Ruggedandreliable. ?SOT-89Package

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEA3055L

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

CED3055L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,8A,RDS(ON)=150mΩ@VGS=10V. RDS(ON)=180mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET3055

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●60V,4A,RDS(ON)=100mΩ@VGS=10V. ●HighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SOT-223Package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET3055L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●60V,3.7A,RDS(ON)=100mΩ@VGS=10V. RDS(ON)=120mΩ@VGS=4.5V. ●HighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SOT-223Package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU3055L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,8A,RDS(ON)=150mΩ@VGS=10V. RDS(ON)=180mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CHM3055LAPAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT12Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOchenmko

力勤股份有限公司

CHM3055LXPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT3.7Ampere FEATURE *Smallpackage.(SC-62/SOT-89) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOchenmko

力勤股份有限公司

CHM3055ZPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT4.0Ampere FEATURE *Smallpackage.(SC-73/SOT-223) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOchenmko

力勤股份有限公司

CHT3055ZPT

NPNSILICONTransistor

CHENMKOchenmko

力勤股份有限公司

CJD3055

COMPLEMENTARYSILICONPOWERTRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTORCJD2955andCJD3055arecomplementarysiliconpowertransistorsmanufacturedbytheepitaxialbaseprocess,mountedinasurfacemountpackage,anddesignedforhighcurrentamplifierandswitchingapplications. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

CJD3055

SURFACEMOUNTCOMPLEMENTARYSILICONPOWERTRANSISTORS

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

CJD3055NPN

siliconpowertransistors

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

CJF3055

SILICONPLANARPOWERTRANSISTORS

CDIL

Continental Device India Limited

CJF3055

SILICONPLANARPOWERTRANSISTORS

CDIL

Continental Device India Limited

CJF3055NPN

SILICONPLANARPOWERTRANSISTORS

CDIL

Continental Device India Limited

CZT3055

2.0WSURFACEMOUNTCOMPLEMENTARYSILICONPOWERTRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTORCZT2955andCZT3055typesaresurfacemountepoxymoldedcomplementarysilicontransistorsmanufacturedbytheepitaxialbaseprocess,designedforsurfacemountedpoweramplifierapplicationsupto6.0amps. MARKINGCODE:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

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90000
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66688
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24+
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5000
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79200
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22+
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2897
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更多BX3055供應(yīng)商 更新時(shí)間2024-12-29 15:13:00