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BYD123

Ultra fast low-loss rectifier

DESCRIPTION CavityfreecylindricalglassSOD81packagethroughImplotec?technology.Thispackageishermeticallysealedandfatiguefreeascoefficientsofexpansionofallusedpartsarematched. FEATURES ?Glasspassivated ?Highmaximumoperatingtemperature ?Lowleakagecur

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

CD123D-B

CD123D-B1xRSchottkyBarrierChipDiodeSeries

Features ■RoHScompliant* ■Leadlesschipform ■Highcurrentcapability ■Lowforwardvoltage ■Halogenfree** Applications ■SwitchModePowerSupplies(SMPS) ■Portableequipmentbatteries ■Highfrequencyrectification ■DC/DCconverters ■Telecommunications

BournsBourns Electronic Solutions

伯恩斯

CEP123

POWERINDUCTORS(SMDType)

SUMIDASumida America Components Inc.

勝美達(dá)電子

CFPT-123

VCTCXOSpecification

IQD

IQD Frequency Products Ltd

CHDTA123EEPT

PNPDigitalSiliconTransistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SC-75/SOT416) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *InternalisolatedPNPtransistorsinonepackage. *Builtinbia

CHENMKOchenmko

力勤股份有限公司

CHDTA123EKPT

PNPDigitalSiliconTransistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SC-59/SOT346) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *InternalisolatedPNPtransistorsinonepackage. *Builtinbia

CHENMKOchenmko

力勤股份有限公司

CHDTA123EMPT

PNPDigitalSiliconTransistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SOT-723) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *InternalisolatedPNPtransistorsinonepackage. *Builtinbiasres

CHENMKOchenmko

力勤股份有限公司

CHDTA123EUPT

PNPDigitalSiliconTransistor

CHENMKOchenmko

力勤股份有限公司

CHDTA123JEPT

PNPDigitalSiliconTransistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SC-75/SOT-416) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *InternalisolatedPNPtransistorsinonepackage. *Builtinbi

CHENMKOchenmko

力勤股份有限公司

CHDTA123JKPT

PNPDigitalSiliconTransistor

CHENMKOchenmko

力勤股份有限公司

CHDTA123JMPT

PNPDigitalSiliconTransistor

CHENMKOchenmko

力勤股份有限公司

CHDTA123JUPT

PNPDigitalSiliconTransistor

CHENMKOchenmko

力勤股份有限公司

CHDTA123YEPT

PNPDigitalSiliconTransistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SC-75/SOT-416) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *InternalisolatedPNPtransistorsinonepackage. *Builtinbi

CHENMKOchenmko

力勤股份有限公司

CHDTA123YKPT

PNPDigitalSiliconTransistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SC-59/SOT-346) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *InternalisolatedPNPtransistorsinonepackage. *Builtinbi

CHENMKOchenmko

力勤股份有限公司

CHDTA123YMPT

PNPDigitalSiliconTransistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SOT-723) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *InternalisolatedPNPtransistorsinonepackage. *Builtinbiasres

CHENMKOchenmko

力勤股份有限公司

CHDTA123YUPT

PNPDigitalSiliconTransistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SC-70/SOT-323) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *InternalisolatedPNPtransistorsinonepackage. *Builtinbi

CHENMKOchenmko

力勤股份有限公司

CHDTB123EKPT

PNPDigitalSiliconTransistor

CHENMKOchenmko

力勤股份有限公司

CHDTB123TKPT

PNPDigitalSiliconTransistor

VOLTAGE50VoltsCURRENT500mAmpere FEATURE *Smallsurfacemountingtype.(SC-59/SOT-346) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *InternalisolatedPNPtransistorsinonepackage. *Builtinbi

CHENMKOchenmko

力勤股份有限公司

CHDTB123YKPT

PNPDigitalSiliconTransistor

VOLTAGE50VoltsCURRENT500mAmpere FEATURE *Smallsurfacemountingtype.(SC-59/SOT-346) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *InternalisolatedPNPtransistorsinonepackage. *Builtinbi

CHENMKOchenmko

力勤股份有限公司

CHDTC123EEPT

NPNDigitalSiliconTransistor

VOLTAGE50VoltsCURRENT100mAmpere FEATURE *Smallsurfacemountingtype.(SC-75/SOT-416) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *InternalisolatedNPNtransistorsinonepackage. *Builtinbi

CHENMKOchenmko

力勤股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    BYD123

  • 制造商:

    PHILIPS

  • 制造商全稱:

    NXP Semiconductors

  • 功能描述:

    Ultra fast low-loss rectifier

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
NXP
2023+
DIP
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
詢價(jià)
PHILIPS
24+
35200
一級(jí)代理/放心采購
詢價(jià)
31A1A1250WVDC
20000
全新原裝現(xiàn)貨 樣品可售
詢價(jià)
PHILIPS
SOD-87
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
詢價(jià)
PHILIPS
22+
SOD-87
8000
原裝正品支持實(shí)單
詢價(jià)
PHILIPS/飛利浦
23+
NA/
7500
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票
詢價(jià)
EIC
20+
SMA
36800
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票
詢價(jià)
EIC
23+
SMA
50000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)
EIC
23+
SMADO-214AC
7600
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
EIC
23+
SMADO-214AC
7600
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
更多BYD123供應(yīng)商 更新時(shí)間2024-12-27 13:30:00