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FQB3P20

200VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQD3P20

200VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQI3P20

200VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQP3P20

200VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQPF3P20

QFETP-CHANNEL

FEATURES ?AdvancedNewDesign ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?VeryLowIntrinsicCapacitances ?ExcellentSwitchingCharacteristics ?UnrivalledGateCharge:6.0nC(Typ.) ?ExtendedSafeOperatingArea ?LowerRDS(ON):2.06?(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQT3P20

200VP-ChannelMOSFET

Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQT3P20TF

P-ChannelQFETMOSFET-200V,-0.67A,2.7

Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQU3P20

200VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

KSMD3P20

200VP-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMU3P20

200VP-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

MTD3P20

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=-3A@TC=25℃ ·DrainSourceVoltage- :VDSS=-200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.5Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    C-DR3P20

  • 制造商：

    Pentair Technical Products/Hoffman

  • 功能描述：

    (3) Din Rails Type 3, fits A o

供應商型號品牌批號封裝庫存備注價格
Advantech
22+
NA
6878
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 詢價
Advantech
22+
Na
1208
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 詢價
IXYS
24+
35200
一級代理/放心采購
 詢價
General
1935+
N/A
55
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 詢價
24+
2789
全新原裝自家現(xiàn)貨!價格優(yōu)勢!
 詢價
23+
QFN-24
3000
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價
CHIPOWER
23+
SOP8
2477
原裝環(huán)保房間現(xiàn)貨假一賠十
 詢價
CHIPOWER
11+
SOP8
2477
剛到現(xiàn)貨加微13425146986
 詢價
CHIPOWER
22+
SOP8
9852
只做原裝正品現(xiàn)貨,或訂貨假一賠十!
 詢價
FUJI TERMINAL
10
詢價
更多C-DR3P20供應商 更新時間2025-1-1 10:08:00

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