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C0603C103J5GAC

SurfaceMountCeramicChipCapacitors??Ultra-HighCapacitance,C0GDielectric

KEMETKEMET Corporation

基美基美公司

C0603C103J5GAC

CERAMICCHIP/STANDARD

KEMETKEMET Corporation

基美基美公司

C0603C103J5JACTU

Ceramic,Commercial-(CxxxxC),0.01uF,5,50V,0603,U2J,SMD,MLCC,Ultra-Stable,LowLoss,ClassI

KEMETKEMET Corporation

基美基美公司

C0603C103J5R

RFLDMOSWidebandIntegratedPowerAmplifiers

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

InGaPHBTLinearAmplifier

1Generaldescription TheMMZ25333Bisaversatile3?stagepoweramplifiertargetedatdriverandpre?driverapplicationsformacroandmicrobase stationsandfinal?stageapplicationsforsmallcells.Itsversatiledesignallowsoperationinanyfrequencybandfrom1500to 2700MHzprovidingg

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

RFPowerFieldEffectTransistors

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

HeterojunctionBipolarTransistorTechnology(InGaPHBT)

0--6000MHz,15.5dB20.5dBmInGaPHBTGPA TheMMG3015NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom0t

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

HeterojunctionBipolarTransistorTechnology(InGaPHBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3003NT1isageneralpurposeamplifierthatisinternallyinputmatchedandinternallyoutputprematched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurpose

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

GalliumArsenideCATVIntegratedAmplifierModule

Description ?24VdcSupplyor12VdcSupplywithBiasChange,40to870MHz,CATVIntegratedForwardAmplifierModule Features ?Specifiedfor79-,112-and132-ChannelLoading ?ExcellentDistortionPerformance ?Built-inInputDiodeProtection ?GaAsFETTransistorTechnology ?Unconditi

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

HeterojunctionBipolarTransistorTechnology(InGaPHBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3002NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissu

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

HeterojunctionBipolarTransistorTechnology(InGaPHBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3001NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissu

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

HeterojunctionBipolarTransistor(InGaPHBT)

0--6000MHz,18.5dB15dBmInGaPHBTGPA TheMMG3008NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom0to

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

HeterojunctionBipolarTransistorTechnology(InGaPHBT)

0-6000MHz,19dB18.5dBmInGaPHBTGPA TheMMG3012NT1isageneralpurposeamplifierthatisinternallyinputmatchedandinternallyoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfreq

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

HeterojunctionBipolarTransistor(InGaPHBT)

0--6000MHz,19dB16dBmInGaPHBTGPA TheMMG3007NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom0to6

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

HeterojunctionBipolarTransistor(InGaPHBT)

0-6000MHz,15dB17dBmInGaPHBT TheMMG3010NT1isaGeneralPurposeAmplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small-signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom0to6000MH

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

HeterojunctionBipolarTransistorTechnology(InGaPHBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) BroadbandHighLinearityAmplifier TheMMG3005NT1isageneralpurposeamplifierthatisinternallyprematchedanddesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforappli

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

HeterojunctionBipolarTransistorTechnology(InGaPHBT)

400--2400MHz,17.5dB33dBmInGaPHBTGPA TheMMG3006NT1isageneralpurposeamplifierthatisinternallyinputprematchedanddesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom400to2400M

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

HeterojunctionBipolarTransistor(InGaPHBT)

0--6000MHz,15dB15dBmInGaPHBTGPA TheMMG3011NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom0to6

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

HeterojunctionBipolarTransistorTechnology(InGaPHBT)

0--6000MHz,20dB20.5dBmInGaPHBT TheMMG3013NT1isageneralpurposeamplifierthatisinternallyinputmatchedandinternallyoutputmatched.ItisdesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfreque

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

C0603C103J5RAC

HeterojunctionBipolarTransistor(InGaPHBT)

0--6000MHz,15dB18dBmInGaPHBTGPA TheMMG3009NT1isageneralpurposeamplifierthatisinternallyinputandoutputmatched.ItisdesignedforabroadrangeofClassA,small--signal,highlinearity,generalpurposeapplications.Itissuitableforapplicationswithfrequenciesfrom0to6

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào):

    C0603C103J5RACTM

  • 功能描述:

    多層陶瓷電容器MLCC - SMD/SMT 50volts 10000pF X7R 5%

  • RoHS:

  • 制造商:

    American Technical Ceramics(ATC)

  • 電容:

    10 pF

  • 容差:

    1 %

  • 電壓額定值:

    250 V

  • 溫度系數(shù)/代碼:

    C0G(NP0) 外殼代碼 -

  • in:

    0505 外殼代碼 -

  • mm:

    1414

  • 工作溫度范圍:

    - 55 C to + 125 C

  • 產(chǎn)品:

    Low ESR MLCCs

  • 封裝:

    Reel

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KEM
24+
32000
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原廠
16+
原廠封裝
10000
全新原裝正品,代理優(yōu)勢(shì)渠道供應(yīng),歡迎來電咨詢
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KEMET
2715
全新原裝 貨期兩周
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KEMET
23+
NA
3668
專做原裝正品,假一罰百!
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KEMET
1944+
SMD
50000
KEMET專營(yíng)!正規(guī)代理,錯(cuò)過是損失!
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KEMET
2022+
3581
全新原裝 貨期兩周
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KEMET
2021+
C0603
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
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KEMET
21+
SMD
4000
原裝現(xiàn)貨假一賠十
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KEMET
20+
電容器
19926
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!
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KEMET
22+
N/A
140174
優(yōu)勢(shì)價(jià)格原裝現(xiàn)貨提供BOM一站式配單服務(wù)
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更多C0603C103J5RACTM供應(yīng)商 更新時(shí)間2024-11-1 16:30:00