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C106M1

Sensitive Gate Silicon Controlled Rectifiers

SensitiveGateSiliconControlledRectifiers ReverseBlockingThyristors GlassivatedPNPNdevicesdesignedforhighvolumeconsumerapplicationssuchastemperature,light,andspeedcontrol;processandremotecontrol,andwarningsystemswherereliabilityofoperationisimportant. Features

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

C106M1

SCRs

SCRs

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

C106M1

SILICON CONTROLLED RECTIFIER

DESCRIPTION: TheCENTRALSEMICONDUCTORC106A1seriesarePNPNsiliconcontrolledrectifiersdesignedforapplicationssuchastemperature,light,speedcontrol,processandremotecontrol,andwarningsystemswherereliabilityofoperationisimportant.

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

C106M1G

Sensitive Gate Silicon Controlled Rectifiers

SensitiveGateSiliconControlledRectifiers ReverseBlockingThyristors GlassivatedPNPNdevicesdesignedforhighvolumeconsumerapplicationssuchastemperature,light,andspeedcontrol;processandremotecontrol,andwarningsystemswherereliabilityofoperationisimportant. Features

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

C106M1G

iscThyristors

FEATURES ·Flat,Rugged,ThermopadConstructionfor LowThermalResistance,HighHeatDissipation andDurability ·PracticalLevelTriggering APPLICATIONS ·Heatingcontrols ·Highpowermotorcontrol ·Highpowerswitching

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

C106M2

SENSITIVE GATE SILICON CONTROLLED RECTIFIER 4 AMP, 200 THRU 600 VOLTS

DESCRIPTION: TheCENTRALSEMICONDUCTORC106B2Seriestypesare4.0A,PNPNsensitivegatetriggeringsilicon controlledrectifierswithvoltagesrangingfrom200Vto600V.Thesedevicesaredesignedforapplicationssuchastemperature,lightandspeedcontrol,andremotewarningandtriggerin

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

C106MG

Sensitive Gate Silicon Controlled Rectifiers

SensitiveGateSiliconControlledRectifiers ReverseBlockingThyristors GlassivatedPNPNdevicesdesignedforhighvolumeconsumerapplicationssuchastemperature,light,andspeedcontrol;processandremotecontrol,andwarningsystemswherereliabilityofoperationisimportant. Features

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

C106M1

The Type C106 Silicon Controlled Rectifier

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

C106M2

The Type C106 Silicon Controlled Rectifier

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

C106M3

The Type C106 Silicon Controlled Rectifier

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

晶體管資料

  • 型號(hào):

    C106M

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    50HZ-Thy

  • 性質(zhì):

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    600V

  • 最大電流允許值:

    2.2A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號(hào):

    C108M,TAG106M,TAG108M,X0403M,

  • 最大耗散功率:

  • 放大倍數(shù):

  • 圖片代號(hào):

    A-83

  • vtest:

    600

  • htest:

    999900

  • atest:

    2.2

  • wtest:

    0

詳細(xì)參數(shù)

  • 型號(hào):

    C106M

  • 功能描述:

    SCR 600V 4A

  • RoHS:

  • 制造商:

    STMicroelectronics 最大轉(zhuǎn)折電流

  • IBO:

    480 A 額定重復(fù)關(guān)閉狀態(tài)電壓

  • VDRM:

    600 V

  • 關(guān)閉狀態(tài)漏泄電流(在VDRM_IDRM下):

    5 uA

  • 開(kāi)啟狀態(tài):

    RMS

  • 正向電壓下降:

    1.6 V

  • 柵觸發(fā)電壓(Vgt):

    1.3 V

  • 最大柵極峰值反向電壓:

    5 V

  • 柵觸發(fā)電流(Igt):

    35 mA 保持電流(Ih

  • 最大值):

    75 mA

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    TO-220

  • 封裝:

    Tube

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更多C106M供應(yīng)商 更新時(shí)間2025-4-16 23:00:00