C1812C224J5RAC電容器的陶瓷電容器規(guī)格書PDF中文資料

2--500 MHz, 600 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFET

Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.

? Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Watts Avg., f = 225 MHz, Channel Bandwidth = 7.61 MHz, Input Signal PAR = 9.3 dB @ 0.01 Probability on CCDF.

Power Gain — 25 dB

Drain Efficiency — 28.5

ACPR @ 4 MHz Offset — --61 dBc @ 4 kHz Bandwidth

? Typical Pulsed Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 600 Watts Peak, f = 225 MHz, Pulse Width = 100 μsec, Duty Cycle = 20

Power Gain — 25.3 dB

Drain Efficiency — 59

? Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 600 Watts Peak Power, Pulse Width = 100 μsec, Duty Cycle = 20

Features

? Characterized with Series Equivalent Large--Signal Impedance Parameters

? CW Operation Capability with Adequate Cooling

? Qualified Up to a Maximum of 50 VDD Operation

? Integrated ESD Protection

? Designed for Push--Pull Operation

? Greater Negative Gate--Source Voltage Range for Improved Class C Operation

? RoHS Compliant

? In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.