C1825C225J5RAC

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedprimarilyforCWlarge-signaloutputanddriverapplicationswithfrequenciesupto600MHz.Devicesareunmatchedandaresuitableforuseinindustrial,medicalandscientificapplications.

C1825C225J5RAC

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500MHz,600W,50VLATERALN--CHANNELBROADBANDRFPOWERMOSFET Designedprimarilyforwidebandapplicationswithfrequenciesupto500MHz.Deviceisunmatchedandissuitableforuseinbroadcastapplications. ?TypicalDVB--TOFDMPerformance:VDD=50Volts,IDQ=2600mA,Pout=125Wa

C1825C225J5RAC

RF Power Field Effect Transistors

N--ChannelEnhancement--ModeLateralMOSFETs DesignedforCDMAbasestationapplicationswithfrequenciesfrom2110to 2170MHz.SuitableforCDMAandmulticarrieramplifierapplications.Tobe usedinClassABandClassCforPCN--PCS/cellularradioandWLL applications. ?TypicalSingle--Ca

C1825C225J5RAC

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

C1825C225J5RAC

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

C1825C225J5RAC

RF Power Field Effect Transistor

C1825C225J5RAC

RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

C1825C225J5RAC

RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

C1825C225J5RAC

RF Power Field Effect Transistors

C1825C225J5RAC

RF Power Field Effect Transistor

C1825C225J5RACTU

SMD Comm X7R, Ceramic, 2.2 uF, 5, 50 VDC, X7R, SMD, MLCC, Temperature Stable, Class II, 1825

C1825C225J5RACTU

RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET

C1825C225J5RAC7800

包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 封裝/外殼：1825（4564 公制） 類別：電容器 陶瓷電容器 描述：CAP CER 2.2UF 50V X7R 1825

C1825C225J5RAC7800

包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 封裝/外殼：1825（4564 公制） 類別：電容器 陶瓷電容器 描述：CAP CER 2.2UF 50V X7R 1825