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C1942

Channel Photomultipliers

Features ?Ultrahighanodesensitivityupto107A/W ?Extremelylowdarkcurrent,typically3pA@106gain ?Verylowequivalentnoiseinput(downto10-17W) ?Veryhighstabilityindarkcurrent(no”bursts”) ?Highgainexceeding108 ?Veryhighdynamicrange ?Compactdimensions ?W

PerkinElmer

PerkinElmer Optoelectronics

C1942P

Channel Photomultipliers

Features ?Ultrahighanodesensitivityupto107A/W ?Extremelylowdarkcurrent,typically3pA@106gain ?Verylowequivalentnoiseinput(downto10-17W) ?Veryhighstabilityindarkcurrent(no”bursts”) ?Highgainexceeding108 ?Veryhighdynamicrange ?Compactdimensions ?W

PerkinElmer

PerkinElmer Optoelectronics

C1943

Channel Photomultipliers

Features ?Ultrahighanodesensitivityupto107A/W ?Extremelylowdarkcurrent,typically3pA@106gain ?Verylowequivalentnoiseinput(downto10-17W) ?Veryhighstabilityindarkcurrent(no”bursts”) ?Highgainexceeding108 ?Veryhighdynamicrange ?Compactdimensions ?W

PerkinElmer

PerkinElmer Optoelectronics

C1943P

Channel Photomultipliers

Features ?Ultrahighanodesensitivityupto107A/W ?Extremelylowdarkcurrent,typically3pA@106gain ?Verylowequivalentnoiseinput(downto10-17W) ?Veryhighstabilityindarkcurrent(no”bursts”) ?Highgainexceeding108 ?Veryhighdynamicrange ?Compactdimensions ?W

PerkinElmer

PerkinElmer Optoelectronics

C1944

Channel Photomultipliers

Features ?Ultrahighanodesensitivityupto107A/W ?Extremelylowdarkcurrent,typically3pA@106gain ?Verylowequivalentnoiseinput(downto10-17W) ?Veryhighstabilityindarkcurrent(no”bursts”) ?Highgainexceeding108 ?Veryhighdynamicrange ?Compactdimensions ?W

PerkinElmer

PerkinElmer Optoelectronics

C1944P

Channel Photomultipliers

Features ?Ultrahighanodesensitivityupto107A/W ?Extremelylowdarkcurrent,typically3pA@106gain ?Verylowequivalentnoiseinput(downto10-17W) ?Veryhighstabilityindarkcurrent(no”bursts”) ?Highgainexceeding108 ?Veryhighdynamicrange ?Compactdimensions ?W

PerkinElmer

PerkinElmer Optoelectronics

C1945

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)?

2SC1945isasiliconNPNepitaxialplanartypetransistordesignedforRFpoweramplifiersonHFbandmobileradioapplications.

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會(huì)社

C1946A

NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)?

DESCRIPTION 2SC1946AisasiliconNPNepitaxialplanartypetransistordesignedforRFpoweramplifiersonVHFbandmobileradioapplications. APPLICATION 25wattsoutputpoweramplifiersinVHFbandmobileradioapplications.

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會(huì)社

C1947

NPN EPITAXIAL PLANAR TYPE(for industrial use RF power amplifiers on VHF band Mobile radio applications)?

DESCRIPTION 2SC1947isasiliconNPNepitaxialplanartypetransistordesignedforindustrialuseRFpoweramplifiersonVHFbandmobileradioapplications. FEATURES ●Highpowergain:Gpe≥10.7dB @VCC=13.5V,PO=3.5W,f=175MHz ●TO-39metalseeledpackageforhighreliability. ●Em

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會(huì)社

C194KFKT

Meet ROHS, Green Product.

TO-GRACEHK TO-GRACE TECHNOLOGY CO.,LTD.

至恩科技香港至恩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    C194

  • 制造商：

    PERKINELMER

  • 制造商全稱：

    PerkinElmer Optoelectronics

  • 功能描述：

    Channel Photomultipliers

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更多C194供應(yīng)商 更新時(shí)間2025-1-16 11:36:00

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