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C2M0160120D

N-Channel Enhancement Mode

SiliconCarbidePowerMOSFETZ-FET?MOSFET N-ChannelEnhancementMode Features ?HighSpeedSwitchingwithLowCapacitances ?HighBlockingVoltagewithLowRDS(on) ?EasytoParallelandSimpletoDrive ?ResistanttoLatch-Up ?HalogenFree,RoHSCompliant Benefts ?HigherSystem

CreeCree, Inc

科銳

C2M0160120D

Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode

Features ?HighBlockingVoltagewithLowOn-Resistance ?HighSpeedSwitchingwithLowCapacitances ?EasytoParallelandSimpletoDrive ?AvalancheRuggedness ?ResistanttoLatch-Up ?HalogenFree,RoHSCompliant Benefits ?HigherSystemEfficiency ?ReducedCoolingRequirements ?I

WOLFSPEED

WOLFSPEED, INC.

C2M0160120D_15

Silicon Carbide Power MOSFET

CreeCree, Inc

科銳

S2M0160120D

1200VSICPOWERMOSFET

Positivetemperaturecharacteristics,easytoparallel. Lowon-resistanceTyp.RDS(on)=175mΩ. Fastswitchingspeedandlowswitchinglosses. Veryfastandrobustintrinsicbodydiode. Processofnon-brightTinelectroplatin

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微電子桑德斯微電子器件（南京）有限公司

S2M0160120J

1200VSICPOWERMOSFET

?Positivetemperaturecharacteristics,easytoparallel. ?Lowon-resistanceTyp.RDS(on)=175mΩ. ?Fastswitchingspeedandlowswitchinglosses. ?Veryfastandrobustintrinsicbodydiode. ?Processofnon-brightTinelectroplatin

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微電子桑德斯微電子器件（南京）有限公司

S2M0160120JTR

1200VSICPOWERMOSFET

?Positivetemperaturecharacteristics,easytoparallel. ?Lowon-resistanceTyp.RDS(on)=175mΩ. ?Fastswitchingspeedandlowswitchinglosses. ?Veryfastandrobustintrinsicbodydiode. ?Processofnon-brightTinelectroplatin

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微電子桑德斯微電子器件（南京）有限公司

S2M0160120K

1200VSICPOWERMOSFET

?Positivetemperaturecharacteristics,easytoparallel. ?Lowon-resistanceTyp.RDS(on)=175mΩ. ?Fastswitchingspeedandlowswitchinglosses. ?Veryfastandrobustintrinsicbodydiode. ?Processofnon-brightTinelectroplatin

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微電子桑德斯微電子器件（南京）有限公司

S2M0160120T

1200VSICPOWERMOSFET

Positivetemperaturecharacteristics,easytoparallel. Lowon-resistanceTyp.RDS(on)=175mΩ. Fastswitchingspeedandlowswitchinglosses. Veryfastandrobustintrinsicbodydiode. Processofnon-brightTinelectroplatin

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微電子桑德斯微電子器件（南京）有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    C2M0160120D

  • 制造商：

    Cree

  • 制造商：

    Cree

  • 功能描述：

    SIC MOSFET N-CH 1.2KV 17.7A

  • 功能描述：

    SIC MOSFET, N-CH, 1.2KV, 17.7A, TO-247-3

  • 功能描述：

    SILICON CARBIDE POWER TRANSISTORS/MODULES

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
EKOWEISS/艾科維斯
22+
TO-247-3
1000000
詢價(jià)
原裝
24+
標(biāo)準(zhǔn)
53326
熱賣原裝進(jìn)口
 詢價(jià)
CREE全系列可接受訂貨
23+
NA
9808
CREE進(jìn)口代理原裝優(yōu)勢(shì)供應(yīng)全系列可訂貨QQ1304306553
 詢價(jià)
CREE/科銳
24+
TO-247
3580
原裝現(xiàn)貨/15年行業(yè)經(jīng)驗(yàn)歡迎詢價(jià)
 詢價(jià)
CREE
24+
TO-247
5000
只做原廠渠道 可追溯貨源
 詢價(jià)
Wolfspeed, Inc.
23+
SMD
918000
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
CREE
23+
TO-247
6000
進(jìn)口原裝現(xiàn)貨
 詢價(jià)
CREE(科銳)
2023+
N/A
4550
全新原裝正品
 詢價(jià)
Wolfspeed
18+
NA
3000
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190
 詢價(jià)
CREE
2020+
TO-247
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
更多C2M0160120D供應(yīng)商 更新時(shí)間2024-11-28 16:20:00

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