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C30831

N-Type Silicon PIN Photodetectors

Description ThisfamilyofN-typesiliconp-i-nphotodiodesisdesignedforuseinawidevarietyofbroadbandlowlightlevelapplicationscoveringthespectralrangefrombelow400toover1100nm. Features ?BroadRangeofPhotosensitiveSurfaceAreas0.2mm2to100mm2 ?LowOp

PerkinElmer

PerkinElmer Optoelectronics

CA3083

GeneralPurposeHighCurrentNPNTransistorArray

GeneralPurposeHighCurrentNPNTransistorArray TheCA3083isaversatilearrayoffivehighcurrent(to100mA)NPNtransistorsonacommonmonolithicsubstrate.Inaddition,twoofthesetransistors(Q1andQ2)arematchedatlowcurrent(i.e.,1mA)forapplicationsinwhichoffsetparamet

Intersil

Intersil Corporation

CA3083

GeneralPurposeHighCurrentNPNTransistorArray

Intersil

Intersil Corporation

CA3083

GeneralPurposeHighCurrentNPNTransistorArray

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

CA3083

SEMICONDUCTORS

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CA-3083

GeneralPurposeHighCurrentNPNTransistorArray

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

CA3083M

GeneralPurposeHighCurrentNPNTransistorArray

GeneralPurposeHighCurrentNPNTransistorArray TheCA3083isaversatilearrayoffivehighcurrent(to100mA)NPNtransistorsonacommonmonolithicsubstrate.Inaddition,twoofthesetransistors(Q1andQ2)arematchedatlowcurrent(i.e.,1mA)forapplicationsinwhichoffsetparamet

Intersil

Intersil Corporation

CA3083MZ

GeneralPurposeHighCurrentNPNTransistorArray

Intersil

Intersil Corporation

CA3083MZ

GeneralPurposeHighCurrentNPNTransistorArray

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

CA3083Z

GeneralPurposeHighCurrentNPNTransistorArray

Intersil

Intersil Corporation

CA3083Z

GeneralPurposeHighCurrentNPNTransistorArray

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

CEM3083

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-13A,RDS(ON)=10mΩ@VGS=-10V. RDS(ON)=15.5mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM3083A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-13A,RDS(ON)=10mW@VGS=-10V. RDS(ON)=15.5mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CN3083

LithiumIonBatteryChargerforSolar-PoweredSystems

CONSONANCEShanghai Consonance Electronics Incorporated

上海如韻上海如韻電子有限公司

CT3083

600V/800VZeroCross6-PinPhototriacOptocoupler

CTMICRO

CT Micro International Corporation

CT3083

6PinZeroCrossTRIACDriverCoupler

CTMICRO

CT Micro International Corporation

CT3083G

6PinZeroCrossTRIACDriverCoupler

CTMICRO

CT Micro International Corporation

CT3083-G

600V/800VZeroCross6-PinPhototriacOptocoupler

CTMICRO

CT Micro International Corporation

CT3083M

6PinZeroCrossTRIACDriverCoupler

CTMICRO

CT Micro International Corporation

CT3083M

600V/800VZeroCross6-PinPhototriacOptocoupler

CTMICRO

CT Micro International Corporation

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PULSAR
20+
50
每一片來自原廠!
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Pulsar
99
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DIODE
23+
DIP12鐵帽鍍金
50000
全新原裝正品現(xiàn)貨,支持訂貨
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DIODE
12+
DIP12鐵帽鍍金
2
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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DIODE
23+
原裝正品現(xiàn)貨
10000
DIP12鐵帽鍍金
詢價
23+24
TO-3
9860
原廠原包裝。終端BOM表可配單。可開13%增值稅
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三洋
24+
TO-220
2800
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NEC
TO220
100
正品原裝--自家現(xiàn)貨-實單可談
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Excelitas Technologies
23+
6000
誠信服務,絕對原裝原盤
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24+
N/A
73000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
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更多C3083供應商 更新時間2025-1-13 10:01:00