C5750Y5V1H226Z中文資料恩智浦?jǐn)?shù)據(jù)手冊PDF規(guī)格書

N--Channel Enhancement--Mode Lateral MOSFET

This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed

for cellular base station applications requiring very wide instantaneous

bandwidth capability covering the frequency range of 1805 to 1880 MHz.

? Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts,

IDQA = 1100 mA, VGSB = 1.45 Vdc, Pout = 63 Watts Avg., Input Signal

PAR = 9.9 dB @ 0.01 Probability on CCDF.

Features

? Advanced High Performance In--Package Doherty

? Designed for Wide Instantaneous Bandwidth Applications

? Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

? Designed for Digital Predistortion Error Correction Systems

? In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.

For R5 Tape and Reel option, see p. 15.