CAB011A12GM3T中文資料WOLFSPEED數據手冊PDF規(guī)格書

echnical Features

? Ultra-Low Loss

? High Frequency Operation

? Zero Turn-Off Tail Current from MOSFET

? Normally-Off, Fail-Safe Device Operation

? Aluminum Nitride Ceramic Substrate

? Optional Pre-Applied Thermal Interface Material

Applications

? DC-DC Converters

? EV Chargers

? High-Efficiency Converters / Inverters

? Renewable Energy

? Smart-Grid / Grid-Tied Distributed Generation

1200 V, 11 mΩ, Silicon Carbide, Half-Bridge Module

VDS 1200 V

RDS(on) 11 mΩ

System Benefits

? Enables Compact, Lightweight Systems

? Increased System Efficiency, due to Low Switching

& Conduction Losses of SiC

? Reduced Thermal Requirements and System Cost