CAT28C256G-12T集成電路（IC）的存儲器規(guī)格書PDF中文資料

CAT28C256G-12T屬于集成電路（IC）的存儲器。由安森美半導體公司制造生產(chǎn)的CAT28C256G-12T存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設備的半導體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Description

The CAT28C256 is a fast, low power, 5 V?only CMOS Parallel EEPROM organized as 32K x 8?bits. It requires a simple interface for in?system programming. On?chip address and data latches, self?timed write cycle with auto?clear and VCC power up/down write protection eliminate additional timing and protection hardware. DATA Polling and Toggle status bits signal the start and end of the self?timed write cycle. Additionally, the CAT28C256 features hardware and software write protection.

The CAT28C256 is manufactured using ON Semiconductor’s advanced CMOS floating gate technology. It is designed to endure 100,000 program/erase cycles and has a data retention of 100 years. The device is available in JEDEC approved 28?pin DIP, 28?pin TSOP or 32?pin PLCC packages.

Features

? Fast Read Access Times: 120/150 ns

? Low Power CMOS Dissipation:

– Active: 25 mA Max.

– Standby: 150 A Max.

? Simple Write Operation:

– On?chip Address and Data Latches

– Self?timed Write Cycle with Auto?clear

? Fast Write Cycle Time:

? 5 ms Max.

? CMOS and TTL Compatible I/O

? Hardware and Software Write Protection

? Automatic Page Write Operation:

? 1 to 64 Bytes in 5 ms

? Page Load Timer

? End of Write Detection:

? Toggle Bit

? DATA Polling

? 100,000 Program/Erase Cycles

? 100 Year Data Retention

? Commercial, Industrial and Automotive Temperature Ranges