CAT28C512LI12集成電路（IC）的存儲(chǔ)器規(guī)格書(shū)PDF中文資料

CAT28C512LI12屬于集成電路（IC）的存儲(chǔ)器。由安森美半導(dǎo)體公司制造生產(chǎn)的CAT28C512LI12存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性?xún)煞N，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線(xiàn)、SPI、UFS、Xccela 總線(xiàn)和 1-線(xiàn)。

DESCRIPTION

The CAT28C512/513 is a fast,low power, 5V-only CMOS parallel EEPROM organized as 64K x 8-bits. It requires a simple interface for in-system programming. On-chip address and data latches, self-timed write cycle with auto-clear and VCC power up/down write protection eliminate additional timing and protection hardware.

FEATURES

■ Fast Read Access Times: 120/150 ns

■ Low Power CMOS Dissipation:

–Active: 50 mA Max.

–Standby: 200 μA Max.

■ Simple Write Operation:

–On-Chip Address and Data Latches

–Self-Timed Write Cycle with Auto-Clear

■ Fast Write Cycle Time:

–5ms Max

■ CMOS and TTL Compatible I/O

■ Automatic Page Write Operation:

–1 to 128 Bytes in 5ms

–Page Load Timer

■ End of Write Detection:

–Toggle Bit

–DATA Polling

■ Hardware and Software Write Protection

■ 100,000 Program/Erase Cycles

■ 100 Year Data Retention

■ Commercial, Industrial and Automotive Temperature Ranges