CAT28F001G-12TT集成電路（IC）的存儲(chǔ)器規(guī)格書(shū)PDF中文資料

CAT28F001G-12TT屬于集成電路（IC）的存儲(chǔ)器。由安森美半導(dǎo)體公司制造生產(chǎn)的CAT28F001G-12TT存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

DESCRIPTION

The CAT28F001 is a high speed 128K X 8 bit electrically erasable and reprogrammable Flash memory ideally suited for applications requiring in-system or after sale code updates. The CAT28F001 has a blocked architecture with one 8 KB Boot Block, two 4 KB Parameter Blocks and one 112 KB Main Block. The Boot Block section can be at the top or bottom of the memory map and includes a reprogramming write lock out feature to guarantee data integrity. It is designed to contain secure code which will bring up the system minimally and download code to other loca

tions of CAT28F001.

FEATURES

■Fast Read Access Time: 90/120 ns

■On-Chip Address and Data Latches

■Blocked Architecture

— One 8 KB Boot Block w/ Lock Out

? Top or Bottom Locations

— Two 4 KB Parameter Blocks

— One 112 KB Main Block

■Low Power CMOS Operation

■12.0V ±5 Programming and Erase Voltage

■Automated Program & Erase Algorithms

■High Speed Programming

■Commercial, Industrial and Automotive Temperature Ranges