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CAT28F001NA-12BT中文資料安森美半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

CAT28F001NA-12BT
廠商型號(hào)

CAT28F001NA-12BT

功能描述

1 Megabit CMOS Boot Block Flash Memory

文件大小

117.63 Kbytes

頁面數(shù)量

18

生產(chǎn)廠商 ON Semiconductor
企業(yè)簡(jiǎn)稱

ONSEMI安森美半導(dǎo)體

中文名稱

安森美半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-21 17:48:00

CAT28F001NA-12BT規(guī)格書詳情

DESCRIPTION

The CAT28F001 is a high speed 128K X 8 bit electrically erasable and reprogrammable Flash memory ideally suited for applications requiring in-system or after sale code updates. The CAT28F001 has a blocked architecture with one 8 KB Boot Block, two 4 KB Parameter Blocks and one 112 KB Main Block. The Boot Block section can be at the top or bottom of the memory map and includes a reprogramming write lock out feature to guarantee data integrity. It is designed to contain secure code which will bring up the system minimally and download code to other loca

tions of CAT28F001.

FEATURES

■Fast Read Access Time: 90/120 ns

■On-Chip Address and Data Latches

■Blocked Architecture

— One 8 KB Boot Block w/ Lock Out

? Top or Bottom Locations

— Two 4 KB Parameter Blocks

— One 112 KB Main Block

■Low Power CMOS Operation

■12.0V ±5 Programming and Erase Voltage

■Automated Program & Erase Algorithms

■High Speed Programming

■Commercial, Industrial and Automotive Temperature Ranges

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