CAT28F010GI-12T集成電路（IC）的存儲(chǔ)器規(guī)格書(shū)PDF中文資料

CAT28F010GI-12T屬于集成電路（IC）的存儲(chǔ)器。由安森美半導(dǎo)體公司制造生產(chǎn)的CAT28F010GI-12T存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

DESCRIPTION

The CAT28F010 is a high speed 128K x 8-bit electrically erasable and reprogrammable Flash memory ideally suited for applications requiring in-system or after-sale code updates. Electrical erasure of the full memory contents is achieved typically within 0.5 second.

FEATURES

■ Fast read access time: 90/120 ns

■ Low power CMOS dissipation:

–Active: 30 mA max (CMOS/TTL levels)

–Standby: 1 mA max (TTL levels)

–Standby: 100 μA max (CMOS levels)

■ High speed programming:

–10 μs per byte

–2 Sec Typ Chip Program

■ 0.5 seconds typical chip-erase

■ 12.0V ± 5 programming and erase voltage

■ Stop timer for program/erase

■ Commercial, industrial and automotive temperature ranges

■ On-chip address and data latches

■ JEDEC standard pinouts:

–32-pin DIP

–32-pin PLCC

–32-pin TSOP (8 x 20)

■ 100,000 program/erase cycles

■ 10 year data retention

■ Electronic signature