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CAT28F010LA12中文資料安森美半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

CAT28F010LA12
廠商型號(hào)

CAT28F010LA12

功能描述

1 Megabit CMOS Flash Memory

文件大小

385.24 Kbytes

頁(yè)面數(shù)量

16 頁(yè)

生產(chǎn)廠商 ON Semiconductor
企業(yè)簡(jiǎn)稱(chēng)

ONSEMI安森美半導(dǎo)體

中文名稱(chēng)

安森美半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-23 23:00:00

CAT28F010LA12規(guī)格書(shū)詳情

DESCRIPTION

The CAT28F010 is a high speed 128K x 8-bit electrically erasable and reprogrammable Flash memory ideally suited for applications requiring in-system or after-sale code updates. Electrical erasure of the full memory contents is achieved typically within 0.5 second.

FEATURES

■ Fast read access time: 90/120 ns

■ Low power CMOS dissipation:

–Active: 30 mA max (CMOS/TTL levels)

–Standby: 1 mA max (TTL levels)

–Standby: 100 μA max (CMOS levels)

■ High speed programming:

–10 μs per byte

–2 Sec Typ Chip Program

■ 0.5 seconds typical chip-erase

■ 12.0V ± 5 programming and erase voltage

■ Stop timer for program/erase

■ Commercial, industrial and automotive temperature ranges

■ On-chip address and data latches

■ JEDEC standard pinouts:

–32-pin DIP

–32-pin PLCC

–32-pin TSOP (8 x 20)

■ 100,000 program/erase cycles

■ 10 year data retention

■ Electronic signature

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CSI
23+
NA/
13
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ON Semiconductor
24+
32-PDIP
56200
一級(jí)代理/放心采購(gòu)
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CSI
PLCC32
68900
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Catalyst
24+
PDIP-32
6230
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CSI
23+
PLCC32
7100
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CSI
22+
PLCC32
43111
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CSI
23+
DIP32
98900
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onsemi
23+/24+
32-DIP
8600
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ON Semiconductor
23+
32-PDIP
7300
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ON Semiconductor
23+
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7300
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