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CEB4060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ?60V,15A,RDS(ON)=85mΩ@VGS=10V. ?SuperhighdensecelldesignforextremelylowRDS(ON) ?Highpowerandcurrenthandlingcapability. ?TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB4060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,17A,RDS(ON)=75m?@VGS=10V. RDS(ON)=90m?@VGS=5.0V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB4060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,17A,RDS(ON)=85m?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB4060A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,17A,RDS(ON)=85m?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB4060A

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB4060A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,17A,RDS(ON)=85mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB4060AL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,17A,RDS(ON)=75m?@VGS=10V. RDS(ON)=90m?@VGS=5.0V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB4060AL

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB4060AL

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB4060AL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,17A,RDS(ON)=75mW@VGS=10V. RDS(ON)=90mW@VGS=5.0V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
無錫中微
21+
N/A
2500
進(jìn)口原裝,優(yōu)勢現(xiàn)貨
詢價(jià)
中微愛芯(I-CORE)
23+
52500
只有原裝/價(jià)格優(yōu)勢/全線可訂
詢價(jià)
i-CORE(中微愛芯電子)
SOP-16
1000
詢價(jià)
24+
N/A
80000
一級(jí)代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇
詢價(jià)
C&K
24+
SMD
49
C04-存儲(chǔ)器
詢價(jià)
I-CORE
24+
con
40
現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價(jià)格https://www.jbchip.com/index
詢價(jià)
I-CORE
24+
con
2500
優(yōu)勢庫存,原裝正品
詢價(jià)
2023+
4400
進(jìn)口原裝現(xiàn)貨
詢價(jià)
TI
2020+
CDIP
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價(jià)
TI
21+
CDIP
3
原裝現(xiàn)貨假一賠十
詢價(jià)
更多CD4060SA.TR供應(yīng)商 更新時(shí)間2023-10-9 11:26:00