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零件編號(hào)下載&訂購(gòu)功能描述制造商&上傳企業(yè)LOGO

CDBA540-G

SMDSchottkyBarrierRectifiers

COMCHIPComchip Technology

典琦典琦科技股份有限公司

CDBA540-HF

SMDSchottkyBarrierRectifiers

COMCHIPComchip Technology

典琦典琦科技股份有限公司

CDBAS540-HF

SMDSchottkyBarrierRectifiers

-Built-instrainrelief. -Metalsiliconjunctionwithguardring. Features -Siliconepitaxialplanarchips. -Foruseinlowvoltage,highfrequencyinverters freewheelingandpolarityprotection. -Highsurgeandcurrentcapability.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

CDBB540-G

SMDSchottkyBarrierRectifiers

COMCHIPComchip Technology

典琦典琦科技股份有限公司

CDBB540-G

SMDSchottkyBarrierRectifiers

COMCHIPComchip Technology

典琦典琦科技股份有限公司

CDBB540-HF

SMDSchottkyBarrierRectifiers

COMCHIPComchip Technology

典琦典琦科技股份有限公司

CDBC540

SMDSchottkyBarrierRectifier

COMCHIPComchip Technology

典琦典琦科技股份有限公司

CDBC540-G

SMDSchottkyBarrierRectifiers

COMCHIPComchip Technology

典琦典琦科技股份有限公司

CDBC540-G

SMDSchottkyBarrierRectifiers

COMCHIPComchip Technology

典琦典琦科技股份有限公司

CDBC540-HF

SMDSchottkyBarrierRectifiers

COMCHIPComchip Technology

典琦典琦科技股份有限公司

CDBC540-HF

SMDSchottkyBarrierRectifiers

COMCHIPComchip Technology

典琦典琦科技股份有限公司

CDBD540-HF

SMDSchottkyBarrierRectifiers

COMCHIPComchip Technology

典琦典琦科技股份有限公司

CDBD540-HF

SMDSchottkyBarrierRectifiers

COMCHIPComchip Technology

典琦典琦科技股份有限公司

CDBMS540LR-HF

SMDSchottkyBarrierRectifier

Features -Forsurfacemountedapplications. -Built-instrainrelief,idealforautomated placement. -Lowforwardvoltage. -Highforwardsurgecurrentcapability.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

CEB540A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,36A,RDS(ON)=48m?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB540L

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB540L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,36A,RDS(ON)=50mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. RDS(ON)=53mW@VGS=5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB540N

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,36A,RDS(ON)=53mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB540N

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,36A,RDS(ON)=53mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED540A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,25A,RDS(ON)=49m?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    CD540E/KIT

  • 制造商:

    Teac

  • 功能描述:

    40X;IDE;PS2BZL;

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更多CD540E/KIT供應(yīng)商 更新時(shí)間2024-12-23 16:30:00