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CEB05P03

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-18A,RDS(ON)=70mW@VGS=-10V. RDS(ON)=120mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED05P03

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-15A,RDS(ON)=70mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=120mW@VGS=-4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED05P03

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-15A,RDS(ON)=70m?@VGS=-10V. RDS(ON)=120m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP05P03

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-18A,RDS(ON)=70mW@VGS=-10V. RDS(ON)=120mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP05P03

SingleP-ChannelEnhancementModeMOSFET

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU05P03

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-15A,RDS(ON)=70m?@VGS=-10V. RDS(ON)=120m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU05P03

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-15A,RDS(ON)=70mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=120mW@VGS=-4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZ05P03

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-93A,RDS(ON)=5.2mW@VGS=-10V. RDS(ON)=8mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

詳細參數(shù)

  • 型號：

    CEB05P03

  • 功能描述：

    -30V P Channel MOS

供應商型號品牌批號封裝庫存備注價格
CET/華瑞
23+
TO-263
360000
專業(yè)供應MOS/LDO/晶體管/有大量價格低
 詢價
CET/華瑞
2020+
SOT263
4500
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
CET
2020+
TO-263
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
CETSEMICO
24+
35200
一級代理/放心采購
 詢價
CET/華瑞
22+
TO-263
20000
保證原裝正品,假一陪十
 詢價
CET
21+
TO-263
40000
原裝現(xiàn)貨假一賠十
 詢價
CET/華瑞
23+
TO-263
10000
公司只做原裝正品
 詢價
CET/華瑞
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
CET/華瑞
2022
TO-263
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
CET/華瑞
2022+
TO-263
50000
原廠代理 終端免費提供樣品
 詢價
更多CEB05P03供應商 更新時間2024-12-27 10:34:00

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