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CEB6056L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=9.0mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED6056

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,76A,RDS(ON)=6.2mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED6056

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,76A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED6056L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,78A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=9.0mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM6056

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,15A,RDS(ON)=7.5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM6056

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,15A,RDS(ON)=7.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM6056L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,14.5A,RDS(ON)=7.8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=10mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP6056

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP6056

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP6056L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,100A,RDS(ON)=6.2mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=9.0mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

供應商型號品牌批號封裝庫存備注價格
CET/華瑞
23+
TO-263
360000
交期準時服務周到
 詢價
VBSEMI/臺灣微碧
23+
T0-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
CET/華瑞
23+
TO265
6500
專注配單,只做原裝進口現(xiàn)貨
 詢價
CET/華瑞
23+
TO265
6500
專注配單,只做原裝進口現(xiàn)貨
 詢價
CET
24+
TO-263
1335
詢價
CET
24+
TO-263
5000
只做原裝公司現(xiàn)貨
 詢價
CET/華瑞
22+
TO-263
20000
保證原裝正品,假一陪十
 詢價
CET
23+
原廠原包
19960
只做進口原裝 終端工廠免費送樣
 詢價
CET
21+
TO-263
900
原裝現(xiàn)貨假一賠十
 詢價
CET/華瑞
2022
TO-263
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
更多CEB6056L供應商 更新時間2025-2-2 10:34:00

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