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CED01N65A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■650V,0.9A,RDS(ON)=15Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED01N65A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 650V,0.9A,RDS(ON)=15W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF01N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES TypeVDSSRDS(ON)ID@VGS CEP01N65650V10.5Ω1.3A10V CEF01N65650V10.5Ω1.3A10V CEB01N65650V10.5Ω1.3A10V ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEK01N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■650V,0.35A,RDS(ON)=10.5Ω@VGS=10V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■TO-92(Bulk)&TO-92(Ammopack)package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEK01N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,0.35A,RDS(ON)=10.5W@VGS=10V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TO-92(Bulk)&TO-92(Ammopack)package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEK01N65A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,0.3A,RDS(ON)=15W@VGS=10V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TO-92(Bulk)&TO-92(Ammopack)package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEK01N65A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■650V,0.3A,RDS(ON)=15Ω@VGS=10V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■TO-92(Bulk)&TO-92(Ammopack)package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP01N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES TypeVDSSRDS(ON)ID@VGS CEP01N65650V10.5Ω1.3A10V CEF01N65650V10.5Ω1.3A10V CEB01N65650V10.5Ω1.3A10V ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU01N65

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■650V,1.2A,RDS(ON)=10.5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU01N65A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,0.9A,RDS(ON)=15W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    CED01N65A

  • 制造商：

    CET

  • 制造商全稱：

    Chino-Excel Technology

  • 功能描述：

    N-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
CET
2020+
TO-251
100
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
CET
23+
TO-251
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
CET
2020+
TO-251
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
C
23+
IPAK
10000
公司只做原裝正品
 詢價(jià)
CET/華瑞
2022+
TO-251
50000
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
CET
TO-251
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
 詢價(jià)
C
23+
IPAK
6000
原裝正品，支持實(shí)單
 詢價(jià)
fairchild
2023+
TO-251
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢 十年芯程一路只做原裝正品
 詢價(jià)
CET/華瑞
2022+
TO-251
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價(jià)
SR
23+
IPAK
5000
原裝正品,假一罰十
 詢價(jià)
更多CED01N65A供應(yīng)商 更新時(shí)間2025-2-5 13:58:00

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