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CEM6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,4.7A,RDS(ON)=66mW@VGS=10V. RDS(ON)=85mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,4.7A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,17A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,4.5A,RDS(ON)=90mΩ@VGS=10V. RDS(ON)=110mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,16A,RDS(ON)=66mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS( Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=85mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,16A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,34A,RDS(ON)=25mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CHM6426JPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT4.7Ampere FEATURE *Smallflatpackage.(SO-8) *SuperHighdensitycelldesignforextremelylowRDS(ON). *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOchenmko

力勤股份有限公司

CHM6426PAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT16Ampere FEATURE *HighdensitycelldesignforextremelylowRDS(ON). *Smallpackage.(TO-252A) APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOchenmko

力勤股份有限公司

CHM6426XPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT3Ampere FEATURE *Smallpackage.(SC-62/SOT-89) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOchenmko

力勤股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
CET/華瑞
24+
TO-251
156549
明嘉萊只做原裝正品現(xiàn)貨
詢價
VBSEMI/臺灣微碧
23+
TO-251
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
C
TO-252
22+
6000
十年配單,只做原裝
詢價
-
23+
NA
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
C
23+
TO-252
6000
原裝正品,支持實單
詢價
CET/華瑞
2022+
TO-251
30000
進口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
詢價
SR
23+
TO-251
6000
原裝正品,假一罰十
詢價
CET
24+
TO-251
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
詢價
CET/華瑞
20+
TO-251
440
現(xiàn)貨很近!原廠很遠!只做原裝
詢價
CET
12+
TO-251
15000
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
詢價
更多CED6426IC供應(yīng)商 更新時間2025-3-12 16:45:00