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CEH2321A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-20V,-4.8A,RDS(ON)=55mΩ@VGS=-4.5V. RDS(ON)=75mΩ@VGS=-2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■TSOP-6package. ■Lead-freeplating;RoHScompliant.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEH2321A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V,-4.8A,RDS(ON)=55mW@VGS=-4.5V. RDS(ON)=75mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TSOP-6package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEN2321A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-3.7A,RDS(ON)=60mW@VGS=-4.5V. RDS(ON)=80mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEN2321B

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-3.9A,RDS(ON)=52mW@VGS=-4.5V. RDS(ON)=72mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CES2321

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-20V,-3.8A,RDS(ON)=55m?@VGS=-4.5V. RDS(ON)=80m?@VGS=-2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CES2321

P-Channel20-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?LoadSwitch ?PASwitch ?DC/DCConverters

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

CES2321

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-3.8A,RDS(ON)=55mW@VGS=-4.5V. RDS(ON)=62mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CES2321A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-20V,-3.8A,RDS(ON)=55mΩ@VGS=-4.5V. RDS(ON)=75mΩ@VGS=-2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Lead-freeplating;RoHScompliant. ■SOT-23package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CES2321A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-3.8A,RDS(ON)=55mW@VGS=-4.5V. RDS(ON)=75mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CES2321B

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-3.9A,RDS(ON)=52mW@VGS=-4.5V. RDS(ON)=72mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
CET/華瑞
2019+PB
TSOP-6
85000
原裝正品 可含稅交易
 詢價(jià)
CET
23+
TSOP-6
39000
原裝正品現(xiàn)貨
 詢價(jià)
CET
19+
TSOP-6
200000
詢價(jià)
CET
20+
SOT23-6
43000
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價(jià)
CET
2020+
SOT23-6
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
CET
2023+
TSOP-6
80000
一級代理/分銷渠道價(jià)格優(yōu)勢 十年芯程一路只做原裝正品
 詢價(jià)
CET
24+
TSOP-6
18800
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢!
 詢價(jià)
CET/華瑞
23+
TSOP-6
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
CET
24+
TSOP-6
85000
原裝現(xiàn)貨假一賠十
 詢價(jià)
CET/華瑞
2022
TSOP-6
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
更多CEH2321A供應(yīng)商 更新時(shí)間2025-1-30 14:00:00

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