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CEK01N6G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■600V,1A,RDS(ON)=9.3Ω@VGS=10V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■TO-92(Bulk)&TO-92(Ammopack)package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEK01N6G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 600V,1A,RDS(ON)=9.3W@VGS=10V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TO-92(Bulk)&TO-92(Ammopack)package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

BES01N6

InductiveSensors

BES517-398-NO-C-05 Basicfeatures Approval/ConformityCE UKCA cULus WEEE BasicstandardIEC60947-5-2

BalluffBalluff Korea Ltd.

巴魯夫巴魯夫集團

CEB01N6

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB01N6G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED01N6

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■650V,0.9A,RDS(ON)=15?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED01N6A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 600V,1.1A,RDS(ON)=12W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED01N6G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■600V,1A,RDS(ON)=9.3Ω@VGS=10V. ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEF01N6

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEF01N6G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEI01N6

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP01N6

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP01N6G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU01N6

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■650V,0.9A,RDS(ON)=15?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU01N6A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 600V,1.1A,RDS(ON)=12W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU01N6G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■600V,1A,RDS(ON)=9.3Ω@VGS=10V. ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

詳細參數(shù)

  • 型號：

    CEK01N6G

  • 制造商：

    CET

  • 制造商全稱：

    Chino-Excel Technology

  • 功能描述：

    N-Channel Enhancement Mode Field Effect Transistor

供應商型號品牌批號封裝庫存備注價格
CET
24+
5000
詢價
曰本
2016+
ZIP10
6523
只做原裝正品現(xiàn)貨!或訂貨!
 詢價
曰本
23+
ZIP10
11500
原裝現(xiàn)貨,價格優(yōu)勢
 詢價
CET
2020+
TO-92
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
CET
2023+
TO-92
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
CET/華瑞
23+
TO-92
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
CET/華瑞
2022
TO-92
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
CET
TO-92
68900
原包原標簽100%進口原裝常備現(xiàn)貨!
 詢價
CET
22+
TO-92
3000
全新原裝正品 現(xiàn)貨 假一罰十
 詢價
N/A
23+
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
更多CEK01N6G供應商 更新時間2025-1-3 14:30:00

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