零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
CEM6086 | N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V,12A,RDS(ON)=11.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | |
CEM6086 | N-Channel Enhancement Mode Field Effect Transistor | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■60V,12A,RDS(ON)=12mΩ@VGS=10V. RDS(ON)=15mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,70A,RDS(ON)=9.2mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,70A,RDS(ON)=9.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,72A,RDS(ON)=10mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=13.5mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,72A,RDS(ON)=10mW@VGS=10V. RDS(ON)=13.5mW@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半導體有限公司 | DOINGTER | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,50A,RDS(ON)=8.7mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,50A,RDS(ON)=8.7mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
CET/華瑞 |
20+ |
SO-8 |
120000 |
原裝正品 可含稅交易 |
詢價 | ||
Bychip |
23+ |
SOP8 |
10000 |
高品質(zhì)替代,技術(shù)支持,參數(shù)選型 |
詢價 | ||
CET/華瑞 |
24+ |
SOP8 |
7906200 |
一站配齊,原盒原包現(xiàn)貨原廠一手渠道聯(lián)系 |
詢價 | ||
CET/華瑞 |
24+ |
SOP-8 |
499513 |
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢價 | ||
CET |
13+P |
SOP-8 |
3093 |
庫存剛更新加微13425146986 |
詢價 | ||
VBsemi |
2020+ |
SO-8 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
CET |
24+ |
SOP-8 |
35200 |
一級代理/放心采購 |
詢價 | ||
VBsemi/臺灣微碧 |
21+ |
SO-8 |
37251 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
VBSEMI/臺灣微碧 |
23+ |
SO-8 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
VBsemi |
23+ |
SOP8 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 |
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