| 零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
CEP16N10 | N-Channel Enhancement Mode Field Effect Transistor FEATURES ■100V,15.2A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | |
CEP16N10 | N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V,15.2A,RDS(ON)=120mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■100V,15.2A,RDS(ON)=115mΩ@VGS=10V. RDS(ON)=125mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V,15.2A,RDS(ON)=115mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=125mW@VGS=5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,13.3A,RDS(ON)=120mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,13.3A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,13.3A,RDS(ON)=115mΩ@VGS=10V. RDS(ON)=125mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,13.3A,RDS(ON)=115mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant. RDS(ON)=125mW@VGS=5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,12A,RDS(ON)=120mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=165mW@VGS=3V. RDS(ON)=130mW@VGS=5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | ||
N-Channel100V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
TO-252Packagedesign | STANSON Stanson Technology | STANSON | ||
N-CHANNEL100V-0.14ohm-16A-TO-220POWERMOSTRANSISTOR N-CHANNEL100V-0.14?-16A-TO-220POWERMOSTRANSISTOR ■TYPICALRDS(on)=0.14? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■HIGHdV/dtRUGGEDNESS ■APPLICATIONORIENTEDCHARACTE | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-Channel100-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
N-ChannelMOSFETusesadvancedSGTtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | ||
N-ChMOSFET | WIINSOKShenzhen Guan Hua Wei Ye Co., Ltd 微碩半導(dǎo)體微碩半導(dǎo)體（深圳）有限公司 | WIINSOK |
詳細(xì)參數(shù)
- 型號(hào)：
CEP16N10
- 制造商：
CET
- 制造商全稱：
Chino-Excel Technology
- 功能描述：
N-Channel Enhancement Mode Field Effect Transistor
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
CET |
23+ |
TO-220 |
15000 |
原裝正品,假一罰十 |
詢價(jià) | ||
CET |
24+ |
TO-220 |
5000 |
只做原裝公司現(xiàn)貨 |
詢價(jià) | ||
CET |
20+ |
TO-220 |
36900 |
原裝優(yōu)勢(shì)主營型號(hào)-可開原型號(hào)增稅票 |
詢價(jià) | ||
CET(華瑞) |
2112+ |
TO-220(TO-220-3) |
105000 |
50個(gè)/管一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長期 |
詢價(jià) | ||
CET |
21+ |
TO-220 |
376 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
CET/華瑞 |
23+ |
TO-220 |
32500 |
公司只做原裝正品 |
詢價(jià) | ||
CET/華瑞 |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
CET/華瑞 |
2022+ |
TO-220 |
2000 |
原廠代理 終端免費(fèi)提供樣品 |
詢價(jià) | ||
CET/華瑞 |
22+ |
TO-220 |
9800 |
只做原裝正品假一賠十!正規(guī)渠道訂貨! |
詢價(jià) | ||
CET |
TO-220 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) |
相關(guān)規(guī)格書
更多- CEP16N10L
- CEP18-DUSTCAP
- CEP20N06_10
- CEP20P06_10
- CEP21A3
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- CEP4736-02
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- CEP4736-06
- CEP4736-08
- CEP4736-10
- CEP4736-12
- CEP4736-14
- CEP4736-16
- CEP4736-18
- CEP4736-20
- CEP4736-22
- CEP4736-24
- CEP4736-26
- CEP4736-28
- CEP4736-30
- CEP4737-01
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- CEP4737-05
- CEP4737-07
- CEP4737-09
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- CEP4737-13
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- CEP4737-17
相關(guān)庫存
更多- CEP-18
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- CEP20P06
- CEP21A2
- CEP-22
- CEP-2202A
- CEP-2224
- CEP-2250
- CEP-2272A
- CEP-24
- CEP3070
- CEP3120
- CEP3205
- CEP35P10
- CEP4050AL
- CEP4060A_10
- CEP4060AL_05
- CEP4060AR
- CEP4069ALR
- CEP-4411AC
- CEP4736-01
- CEP4736-03
- CEP4736-05
- CEP4736-07
- CEP4736-09
- CEP4736-11
- CEP4736-13
- CEP4736-15
- CEP4736-17
- CEP4736-19
- CEP4736-21
- CEP4736-23
- CEP4736-25
- CEP4736-27
- CEP4736-29
- CEP4737
- CEP4737-02
- CEP4737-04
- CEP4737-06
- CEP4737-08
- CEP4737-10
- CEP4737-12
- CEP4737-14
- CEP4737-16
- CEP4737-18
