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CET0215

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■150V,2A,RDS(ON)=440mΩ@VGS=10V. RDS(ON)=580mΩ@VGS=6V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Lead-freeplating;RoHScompliant. ■SOT-223package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET04N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■100V,3A,RDS(ON)=200mΩ@VGS=10V. RDS(ON)=280mΩ@VGS=6V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET3055

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ●60V,4A,RDS(ON)=100mΩ@VGS=10V. ●HighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SOT-223Package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET3055L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ●60V,3.7A,RDS(ON)=100mΩ@VGS=10V. RDS(ON)=120mΩ@VGS=4.5V. ●HighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SOT-223Package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET3133

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-10A,RDS(ON)=19mW@VGS=-10V. RDS(ON)=29mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-223package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET3252

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,8A,RDS(ON)=32mΩ@VGS=10V. RDS(ON)=45mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET4301

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-40V,-6.3A,RDS(ON)=44m?@VGS=-10V. RDS(ON)=68m?@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET4401B

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-40V,-4.9A,RDS(ON)=57mΩ@VGS=-10V. RDS(ON)=85mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET4435A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-8.8A,RDS(ON)=24m?@VGS=-10V. RDS(ON)=35m?@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET4435A

P-Channel 35 V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?100RgTested ?100UISTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?LoadSwitches,AdaptorSwitch -NotebookPCs

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

CET4435A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-8.8A,RDS(ON)=24mW@VGS=-10V. RDS(ON)=35mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-223package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET451AN

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ●30V,7.2A,RDS(ON)=35mW@VGS=10V.RDS(ON)=50mW@VGS=4.5V. ●HighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SOT-223Package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET453N

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,8A,RDS(ON)=28m?@VGS=10V. RDS(ON)=42m?@VGS=4.5V. ■HighdensecelldesignforlowRDS(ON). ■Ruggedandreliable. ■SOT-223Package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET6426

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■60V,4.5A,RDS(ON)=90mΩ@VGS=10V. RDS(ON)=110mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET6601

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-60V,-4.3A,RDS(ON)=86mΩ@VGS=-10V. RDS(ON)=125mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET6601

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V,-4.3A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-223package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET6601A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V,-4.4A,RDS(ON)=86mW@VGS=-10V. RDS(ON)=125mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-223package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET6861

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-60V,-3.5A,RDS(ON)=130mΩ@VGS=-10V. RDS(ON)=170mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET6961

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V,-4.1A,RDS(ON)=110mW@VGS=-10V. RDS(ON)=150mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-223package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET9435A

P-Channel Enhancement Mode MOSFET

CETChino-Excel Technology

華瑞華瑞股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    CET

  • 制造商：

    CET

  • 制造商全稱：

    Chino-Excel Technology

  • 功能描述：

    N-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
CET/華瑞
19+
SOT-223
300000
原裝正品 可含稅交易
 詢價(jià)
CET/華瑞
24+
SOT-223
156762
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
CET
24+
SOT-23
110000
詢價(jià)
SR
23+
SOT-223
5000
原裝正品,假一罰十
 詢價(jià)
CET
19+
SOT-223
67794
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價(jià)
CET
1822+
SOT-223
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
 詢價(jià)
CET
24+
SOT-223
90000
進(jìn)口原裝現(xiàn)貨假一罰十價(jià)格合理
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CET
22+
SOT-223
16954
原裝正品現(xiàn)貨,可開13點(diǎn)稅
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CET
18+
SOT-223
41200
原裝正品,現(xiàn)貨特價(jià)
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CET
20+
SOT-223
38900
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票
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更多CET供應(yīng)商 更新時(shí)間2025-1-19 14:00:00

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