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零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
CEU02N7G	文件：614.75 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V,1.6A,RDS(ON)=6.75W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU02N7G	文件：403.3 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■700V,1.6A,RDS(ON)=6.75Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEU02N7G	文件：892.2 Kbytes Page：5 Pages	N-Channel MOSFET uses advanced trench technology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導(dǎo)體有限公司	DOINGTER
CEU02N7G-1	文件：671.91 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■720V,1.6A,RDS(ON)=6.75Ω@VGS=10V. 750V@Tc=150°C ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEU02N7G-1	文件：619.27 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 720V,1.6A,RDS(ON)=6.75W@VGS=10V. 750V@Tc=150C SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB02N7	文件：134.8 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEB02N7G	文件：625.85 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB02N7G	文件：403.86 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CED02N7	文件：122.66 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■700V,1.6A,RDS(ON)=6.6?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CED02N7G	文件：614.75 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 700V,1.6A,RDS(ON)=6.75W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED02N7G	文件：403.3 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■700V,1.6A,RDS(ON)=6.75Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEF02N7	文件：134.8 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEF02N7G	文件：625.85 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEF02N7G	文件：403.86 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEI02N7	文件：134.8 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEK02N7G	文件：674.19 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 700V,0.4A,RDS(ON)=6.75W@VGS=10V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TO-92(Bulk)&TO-92(Ammopack)package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP02N7	文件：134.8 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEP02N7G	文件：625.85 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP02N7G	文件：403.86 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEU02N7	文件：122.66 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■700V,1.6A,RDS(ON)=6.6?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET

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型號：
CEU02N7G
制造商：
CET
制造商全稱：
Chino-Excel Technology
功能描述：
N-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市中福國際管理有限公司	CEU02N7G	CET/華瑞	23+	TO-252	360000	專業(yè)供應(yīng)MOS/LDO/晶體管/有大量價格低	詢價
深圳市尼博電子有限公司	CEU02N7G	CET	22+	TO252	50000	一級代理,放心購買!	詢價
深圳市航潤創(chuàng)能電子集團有限公司	CEU02N7G	CET	21+	TO-251	27000	原裝現(xiàn)貨假一賠十	詢價
深圳市國宇半導(dǎo)體科技有限公司	CEU02N7G	CET/華瑞	23+	TO-252	10000	公司只做原裝正品	詢價
深圳市河鋒鑫科技有限公司	CEU02N7G	CET/華瑞	2022+	TO-252	32500	原廠代理終端免費提供樣品	詢價
貿(mào)澤芯城（深圳）電子科技有限公司	CEU02N7G	CET/華瑞	23+	TO-251	27000	原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種	詢價
易創(chuàng)佳業(yè)科技（深圳）有限公司	CEU02N7G	CET	23+	TO-252	6000	原裝正品，支持實單	詢價
深圳市威雅利發(fā)展有限公司	CEU02N7G	CET	07+	TO-251	27000	一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力	詢價
深圳市維爾達電子有限公司	CEU02N7G	utc	2023+	TO-252	80000	一級代理/分銷渠道價格優(yōu)勢十年芯程一路只做原裝正品	詢價
深圳市得捷芯城科技有限公司	CEU02N7G	CET/華瑞	23+	NA/	30250	原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票	詢價

更多CEU02N7G供應(yīng)商更新時間2025-1-8 10:33:00

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