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CEU02N7G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 700V,1.6A,RDS(ON)=6.75W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU02N7G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■700V,1.6A,RDS(ON)=6.75Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU02N7G

N-Channel MOSFET uses advanced trench technology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

CEU02N7G-1

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■720V,1.6A,RDS(ON)=6.75Ω@VGS=10V. 750V@Tc=150°C ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU02N7G-1

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 720V,1.6A,RDS(ON)=6.75W@VGS=10V. 750V@Tc=150C SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB02N7

N-ChannelEnhancementModeFieldEffectTransistor

N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB02N7G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB02N7G

N-ChannelEnhancementModeFieldEffectTransistor

N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED02N7

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■700V,1.6A,RDS(ON)=6.6?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED02N7G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 700V,1.6A,RDS(ON)=6.75W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    CEU02N7G

  • 制造商：

    CET

  • 制造商全稱：

    Chino-Excel Technology

  • 功能描述：

    N-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
CET
22+
TO252
50000
一級(jí)代理,放心購(gòu)買!
 詢價(jià)
CET
21+
TO-251
27000
原裝現(xiàn)貨假一賠十
 詢價(jià)
CET/華瑞
23+
TO-252
10000
公司只做原裝正品
 詢價(jià)
CET/華瑞
2022+
TO-252
32500
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
CET/華瑞
23+
TO-251
27000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
CET
23+
TO-252
6000
原裝正品，支持實(shí)單
 詢價(jià)
CET
07+
TO-251
27000
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
utc
2023+
TO-252
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢價(jià)
CET/華瑞
23+
NA/
30250
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票
 詢價(jià)
CET/華瑞
2022+
TO-252
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價(jià)
更多CEU02N7G供應(yīng)商 更新時(shí)間2025-2-8 9:04:00

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