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CEU30N08

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 80V,30A,RDS(ON)=30mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant. RDS(ON)=38mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU30P10

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-100V,-30A,RDS(ON)=76mΩ@VGS=-10V. RDS(ON)=92mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU30P10

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -100V,-27A,RDS(ON)=76mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=92mW@VGS=-4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU30P10A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -100V,-29A,RDS(ON)=55mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. Pb-freeleadplating;RoHScompliant. HalogenFree. RDS(ON)=60mW@VGS=-4.5V. Switchedmode

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU3100

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,51A,RDS(ON)=10mΩ@VGS=10V. RDS(ON)=17mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU3100

N-Channel MOSFET uses advanced trench technology

Description: ThisN-ChannelMOSFETusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge. Itcanbeusedinawidevarietyofapplications. Features: 1)VDS=30V,ID=55A,RDS(ON)

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

CEU3100

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,51A,RDS(ON)=10mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=17mW@VGS=4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU3109

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 30V,22A,RDS(ON)=12mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-252-4Lpackage. RDS(ON)=20mW@VGS=4.5V. Lead-freeplating;RoHScompliant. -30V,-18A,RDS(ON)=20mW@VGS=10V. RDS(ON)=30mW@VGS

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU3112

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,45A,RDS(ON)=11mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=15mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU3120

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,36A,RDS(ON)=15m?@VGS=10V. RDS(ON)=22m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

詳細(xì)參數(shù)

  • 型號:

    CEU3

  • 制造商:

    TDK

  • 制造商全稱:

    TDK Electronics

  • 功能描述:

    Multilayer Ceramic Chip Capacitors

供應(yīng)商型號品牌批號封裝庫存備注價格
CET
23+
TO252
7000
絕對全新原裝!100%保質(zhì)量特價!請放心訂購!
詢價
CET
17+
TO252
6200
100%原裝正品現(xiàn)貨
詢價
CET
12+
TO-252(DPAK)
15000
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
詢價
SR
23+
TO-252
5000
原裝正品,假一罰十
詢價
CET
2016+
TO252
2500
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
詢價
CET
24+
TO-252
3290
詢價
VBsemi
24+
TO-252-2
5000
全現(xiàn)原裝公司現(xiàn)貨
詢價
CET
2020+
TO-252
4500
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
VBsemi
23+
TO-252A
8650
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
詢價
TO-252
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
詢價
更多CEU3供應(yīng)商 更新時間2025-4-15 19:46:00