CGH60120D中文資料WOLFSPEED數(shù)據(jù)手冊PDF規(guī)格書
| 廠商型號 |
CGH60120D |
| 功能描述 | 120 W, 6.0 GHz, GaN HEMT Die |
| 文件大小 |
1.05102 Mbytes |
| 頁面數(shù)量 |
8 頁 |
| 生產(chǎn)廠商 | WOLFSPEED, INC. |
| 企業(yè)簡稱 |
WOLFSPEED |
| 中文名稱 | WOLFSPEED, INC.官網(wǎng) |
| 原廠標(biāo)識 |  |
| 數(shù)據(jù)手冊 | |
| 更新時間 | 2025-2-27 17:36:00 |
| 人工找貨 | CGH60120D價格和庫存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
CGH60120D規(guī)格書詳情
Description
Wolfspeed’s CGH60120D is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT). GaN has superior properties compared to silicon or gallium
arsenide, including higher breakdown voltage, higher saturated electron drift
velocity, and higher thermal conductivity. GaN HEMTs offer greater power
density and wider bandwidths compared to Si and GaAs transistors.
Large Signal Models Available for ADS and MWO
Features
? 13 dB Typical Small Signal Gain at 4 GHz
? 12 dB Typical Small Signal Gain at 6 GHz
? 120 W Typical PSAT
? 28 V Operation
? High Breakdown Voltage
? High Temperature Operation
? Up to 6 GHz Operation
? High Efficiency
Applications
? 2-Way Private Radio
? Broadband Amplifiers
? Cellular Infrastructure
? Test Instrumentation
? Class A, AB, Linear amplifiers suitable for OFDM,
W-CDMA, LTE, EDGE, CDMA waveforms
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Cree/Wolfspeed |
21+ |
Die |
13880 |
公司只售原裝,支持實(shí)單 |
詢價 | ||
CORNELLDUBILIER-CDE |
2020+ |
Bulk |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
Cree/Wolfspeed |
23+ |
Die |
9000 |
原裝正品，支持實(shí)單 |
詢價 | ||
Cree/Wolfspeed |
22+ |
Die |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
CREE |
24+ |
SMD |
1680 |
一級代理原裝進(jìn)口現(xiàn)貨 |
詢價 | ||
Cornell-Dubilier |
新 |
5 |
全新原裝 貨期兩周 |
詢價 | |||
CREE/科銳 |
23+ |
MOSFET |
10000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
CREE |
24+ |
N/A |
90000 |
進(jìn)口原裝現(xiàn)貨假一罰十價格合理 |
詢價 | ||
CREE |
18+ |
SMD |
85600 |
保證進(jìn)口原裝可開17%增值稅發(fā)票 |
詢價 | ||
CREE |
638 |
原裝正品 |
詢價 |
