CGHV1F025S開發(fā)板套件編程器的射頻評估開發(fā)套件開發(fā)板規(guī)格書PDF中文資料

CGHV1F025S屬于開發(fā)板套件編程器的射頻評估開發(fā)套件開發(fā)板。由WOLFSPEED, INC.制造生產的CGHV1F025S射頻評估和開發(fā)套件，開發(fā)板本系列中的產品適用于在已知實施環(huán)境中，提供能訪問射頻相關器件的功能或者有助于訪問該功能。所含的焦點產品范圍從射頻信號鏈元器件（如放大器和檢測器）到模塊化收發(fā)器，以及不直接包含焦點產品的適配器硬件，但此類硬件可供方便地訪問用戶單獨提供的特定射頻產品或系列。

Description

Wolfspeed’s CGHV1F025S is an unmatched, gallium nitride (GaN) high electron

mobility transistor (HEMT) designed specifically for high efficiency, high gain and

wide bandwidth capabilities. The device can be deployed for L-, S-, C-, X- and

Ku-Band amplifier applications. The datasheet specifications are based on a

X-Band (8.9 - 9.6 GHz) amplifier. The CGHV1F025S operates on a 40 volt rail circuit

while housed in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package.

Under reduced power, the transistor can operate below 40V to as low as 20V VDD,

maintaining high gain and efficiency.

Features

? Up to 15 GHz Operation

? 25 W Typical Output Power

? 11 dB Gain at 9.4 GHz

? Application circuit for 8.9 - 9.6 GHz