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CJP07N20

Power Filed Effect Transistor

FEATURES ●RobustHighVoltageTermination ●AvalancheEnergySpecified ●Source-to-DrainDiodeRecoveryTimeComparabletoa DiscreteFastRecoveryDiode ●DiodeisCharacterizedforUseinBridgeCircuits ●IDSSandVDS(on)SpecifiedatElevatedTemperature

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

ISPD07N20G

N-ChannelMOSFETTransistor

?DESCRITION ?Idealforhigh-frequencyswitchingandsynchronousrectification ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.4? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SPD07N20

SIPMOS?PowerTransistorFeaturesNchannelEnhancementmodeAvalancherated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD07N20

SIPMOSPowerTransistor

Features ?Nchannel ?Enhancementmode ?Avalancherated ?dv/dtrated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD07N20G

N-ChannelMOSFETTransistor

?DESCRITION ?Idealforhigh-frequencyswitchingandsynchronousrectification ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.4? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SPD07N20G

SIPMOS?PowerTransistorFeaturesNchannelEnhancementmodeAvalancherated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD07N20G

N-Channel200V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?175°CJunctionTemperature ?PWMOptimized ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?PrimarySideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

SPU07N20

SIPMOSPowerTransistor

Features ?Nchannel ?Enhancementmode ?Avalancherated ?dv/dtrated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPU07N20G

iscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-251(IPAK)packaging ?Highspeedswitching ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Powersupply ?DC-DCconverters ?Motorcontrol ?Switchingapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SPU07N20G

SIPMOS?PowerTransistorFeaturesNchannelEnhancementmodeAvalancherated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

WSF07N20

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    CJP07N20

  • 功能描述：

    MOSFET

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2020+
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985000
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長(zhǎng)電
22+23+
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24537
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2022+
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原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
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22+
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CJ/長(zhǎng)電
2015
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10971
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CJ/長(zhǎng)電
2022+
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30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
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更多CJP07N20供應(yīng)商 更新時(shí)間2024-12-24 15:00:00

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