CLL3H0914LS-700分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書(shū)PDF中文資料

CLL3H0914LS-700屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻。由安譜隆制造生產(chǎn)的CLL3H0914LS-700晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個(gè)端子的半導(dǎo)體器件，器件中電流受電場(chǎng)控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號(hào)或功率的晶體管類(lèi)型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。

General description

The CLL3H0914L-700 and CLL3H0914LS-700 are 700 W internally pre-matched RF

GaN-SiC HEMTs power transistors that are usable in the frequency range from 0.9 GHz to

1.4 GHz. The devices offer excellent efficiency, thermal resistance and ruggedness

suitable for short- and long-pulse applications. Further, Section 8.3 highlights

performance curves for application reference designs at frequencies from 1.2 GHz to

1.4 GHz, 1030 MHz and 960 MHz to 1215 MHz.

Features and benefits

? 700 W internally pre-matched GaN-SiC HEMT covering a frequency range from

0.9 GHz to 1.4 GHz with internal stability network

? Low thermal resistance

? Excellent ruggedness

? High efficiency, short pulse reference designs at 960 MHz to 1215 MHz and 1030 MHz

for avionics applications

? High efficiency, long pulse reference designs at 1.2 GHz to 1.4 GHz

? Typical performance features of all three reference designs summarized in Section 8.3

? For RoHS compliance see the product details on the Ampleon website