首頁 >CMA60R190Q>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
600VCoolMOS?CEPowerTransistor 600VCoolMOSaCEPowerTransistor Applications ??PFCstages,hardswitchingPWMstagesandresonantswitchingstages ??fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting. | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
600V0.19(ohm)N-channelMOSFET | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
600V0.19(ohm)N-channelMOSFET | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
600V0.19(ohm)N-channelMOSFET | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
600V0.19(ohm)N-channelMOSFET | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
600V0.19?N-channelMOSFET ?Description MMF60R190RispowerMOSFETusingMagnachip’sadvancedsuperjunctiontechnologythatcan realizeverylowon-resistanceandgatecharge.Thisdevicecombinesimprovementofswitching speedwitheffectiveswitchingbehavior.Anditalsowillprovidemuchhighefficiencybyusing o | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
600V0.19?N-channelMOSFET ?Description MMF60R190RispowerMOSFETusingMagnachip’sadvancedsuperjunctiontechnologythatcan realizeverylowon-resistanceandgatecharge.Thisdevicecombinesimprovementofswitching speedwitheffectiveswitchingbehavior.Anditalsowillprovidemuchhighefficiencybyusing o | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
600V0.19ohmN-channelMOSFET | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
600V0.19ohmN-channelMOSFET | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
600V0.19(ohm)N-channelMOSFET | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
600V0.190ohmN-channelMOSFET | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
600V0.190ohmN-channelMOSFET | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
600V0.19(ohm)N-channelMOSFET | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
600V0.19(ohm)N-channelMOSFET | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
600V0.19(ohm)N-channelMOSFET | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
600V0.19?N-channelMOSFET ?Description MMSF60R190QispowerMOSFETusingMagnachip’sadvancedsuperjunctiontechnologythat canrealizeverylowon-resistanceandgatecharge.Itwillprovidemuchhighefficiencybyusing optimizedchargecouplingtechnology.TheseuserfriendlydevicesgiveanadvantageofLowEMIto | MGCHIP MagnaChip Semiconductor. | MGCHIP |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Cmos(廣東場效應半導體) |
23+ |
TO3P |
6000 |
誠信服務,絕對原裝原盤 |
詢價 | ||
24+ |
N/A |
56000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
Cmos/鍦烘晥搴斿崐瀵間綋 |
23 |
TO-3P |
100000 |
N鍦? |
詢價 | ||
Mini-circuits |
18+ |
原廠原裝 |
6000 |
專注Mini射頻微波全系列,只做原裝正品,現(xiàn)貨庫存 |
詢價 | ||
2017+ |
SMD |
1585 |
只做原裝正品假一賠十! |
詢價 | |||
MINI |
18+ |
NA |
2299 |
進口原裝正品優(yōu)勢供應QQ3171516190 |
詢價 | ||
MINI |
24+ |
SMD |
3600 |
MINI專營品牌全新原裝正品假一賠十 |
詢價 | ||
MINI |
NA |
6688 |
18 |
現(xiàn)貨庫存 |
詢價 | ||
MINI |
三年內(nèi) |
1983 |
只做原裝正品 |
詢價 | |||
Mini-Circuits |
638 |
原裝正品 |
詢價 |
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