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CMLT5551

SURFACEMOUNTPICOminiDUALNPNSMALLSIGNALSILICONSWITCHINGTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTORCMLT5551consistsoftwoindividual,isolatedNPNsilicontransistorsmanufacturedbytheepitaxialplanarprocessandepoxymoldedinanSOT-563sufacemountpackage.Thisdevicehasbeendesignedforhighvoltageamplifierapplications. MARKINGCODE:5C5

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

CMLT5551HC

SURFACEMOUNTPICOminiHIGHCURRENTSILICONNPNTRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTORCMLT5551HCisahighcurrentNPNsilicontransistor,manufacturedbytheepitaxialplanarprocessandepoxymoldedinanSOT-563sufacemountpackage.Thisdevicehasbeendesignedforhighvoltageandhighcurrentamplifierapplications. MARKINGCODE:C51

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

CMPT5551

NPNSILICONTRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTORCMPT5551typeisanNPNsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforhighvoltageamplifierapplications. MARKINGCODE:1FF

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

CMPT5551E

ENHANCEDSPECIFICATIONSURFACEMOUNTNPNSILICONTRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTORCMPT5551EisanNPNSiliconTransistor,packagedinanSOT-23case,designedforgeneralpurposeamplifierapplicationsrequiringhighbreakdownvoltageandsmallspacesavingpackaging. MARKINGCODE:C555 FEATURES: ?HighCollectorBreakdownVoltage250V

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

CMPT5551HC

SURFACEMOUNTHIGHCURRENTSILICONNPNTRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTORCMPT5551HCtypeisahighcurrentNPNsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforhighvoltageandhighcurrentamplifierapplications. MARKINGCODE:1FHC

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

CMUT5551

NPNSILICONTRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTORCMUT5551typeisanNPNsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforhighvoltageamplifierapplications. MARKINGCODE:55C

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

CMUT5551E

ENHANCEDSPECIFICATIONSURFACEMOUNTNPNSILICONTRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTORCMUT5551EisanNPNSiliconTransistor,packagedinanSOT-523case,designedforgeneralpurposeamplifierapplicationsrequiringhighbreakdownvoltageandsmallspacesavingpackaging. MARKINGCODE:5C1 FEATURES: ?HighCollectorBreakdownVoltage250V

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

CTLT5551

GENERALPURPOSENPNSILICONTRANSISTORS

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

CXT5551

SURFACEMOUNTNPNSILICONTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTORCXT5551typeisanNPNsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforhighvoltageamplifierapplications.

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

CXT5551

NPNPlastic-EncapsulateTransistors

Features ●Halogenfreeavailableuponrequestbyaddingsuffix-HF ●LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) ●PowerDissipation:PCM=0.5W(Tamb=25°C) ●CollectorCurrent:ICM=0.6A ●Collector-BaseVoltage:V(BR)CBO=180V ●Marking

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號：

    CMBT5551T/-W

  • 功能描述：

    兩極晶體管 - BJT NPN 0.6A 160V HV

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    PNP 集電極—基極電壓

  • VCBO：

    集電極—發(fā)射極最大電壓

  • VCEO：

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO：

    - 6 V

  • 增益帶寬產(chǎn)品fT：

    直流集電極/Base Gain hfe

  • Min：

    100 A

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    PowerFLAT 2 x 2

供應(yīng)商型號品牌批號封裝庫存備注價格
三年內(nèi)
1983
只做原裝正品
 詢價
24+
38520
一級代理/放心購買
 詢價
GENERAL
2020+
SOT-23
35000
100%進(jìn)口原裝正品公司現(xiàn)貨庫存
 詢價
CDIL
2023+
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
空白
SOT-23
68500
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
華昕
23+
20000
正品原裝貨價格低
 詢價
CDIL
23+
原廠正規(guī)渠道
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
CDIL
23+
原廠正規(guī)渠道
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
CENTRAL
24+
SOT-23
66200
新進(jìn)庫存/原裝
 詢價
GENERAL
24+
SOT-23
90000
進(jìn)口原裝現(xiàn)貨假一罰十價格合理
 詢價
更多CMBT5551T/-W供應(yīng)商 更新時間2025-2-22 15:08:00

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