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CMPA1D1E030D中文資料WOLFSPEED數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

CMPA1D1E030D
廠(chǎng)商型號(hào)

CMPA1D1E030D

功能描述

30 W, 13.75 - 14.5 GHz, 40 V GaN MMIC, Power Amplifier

文件大小

1.09631 Mbytes

頁(yè)面數(shù)量

7 頁(yè)

生產(chǎn)廠(chǎng)商 WOLFSPEED, INC.
企業(yè)簡(jiǎn)稱(chēng)

WOLFSPEED

中文名稱(chēng)

WOLFSPEED, INC.官網(wǎng)

原廠(chǎng)標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠(chǎng)下載

更新時(shí)間

2025-2-4 11:00:00

CMPA1D1E030D規(guī)格書(shū)詳情

Description

Wolfspeed’s CMPA1D1E030D is a gallium nitride (GaN) High Electron

Mobility Transistor (HEMT) based monolithic microwave integrated

circuit (MMIC) on a Silicon Carbide substrate, using a 0.25 μm gate

length fabrication process. GaN-on-SiC has superior properties

compared to silicon, gallium arsenide or GaN-on-Si, including higher

breakdown voltage, higher saturated electron drift velocity and higher

thermal conductivity. GaN HEMTs also offer greater power density and

wider bandwidths compared to Si, GaAs, and GaN-on-Si transistors.

Features

? 27 dB Small Signal Gain

? 30 W Typical PSAT

? Operation up to 40 V

? High Breakdown Voltage

? High Temperature Operation

Applications

? Satellite Communications Uplink

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
CREE
2308+
原廠(chǎng)原包
6850
十年專(zhuān)業(yè)專(zhuān)注 優(yōu)勢(shì)渠道商正品保證
詢(xún)價(jià)
CREE/科銳
2021+
20
100500
一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
詢(xún)價(jià)
Cree
23+
SMD
5000
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
詢(xún)價(jià)
CREE(科銳)
23+
NA
20094
正納10年以上分銷(xiāo)經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
詢(xún)價(jià)
Cree
22+
SMD
10000
原裝正品優(yōu)勢(shì)現(xiàn)貨供應(yīng)
詢(xún)價(jià)
Cree/Wolfspeed
22+
9000
原廠(chǎng)渠道,現(xiàn)貨配單
詢(xún)價(jià)
Cree/Wolfspeed
21+
13880
公司只售原裝,支持實(shí)單
詢(xún)價(jià)
CREE
23+
NA
2007
原裝正品實(shí)單必成
詢(xún)價(jià)
CREE
22+
SMD
489
原裝進(jìn)口現(xiàn)貨假一賠十
詢(xún)價(jià)
CREE
22+
SMD
489
鄭重承諾只做原裝進(jìn)口貨
詢(xún)價(jià)