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CMSD6001

SURFACEMOUNTLOWLEAKAGESILICONSWITCHINGDIODES

CentralCentral Semiconductor Corp

美國中央半導體

CMSD6001

SURFACEMOUNTULTRALOWLEAKAGESILICONSWITCHINGDIODES

CentralCentral Semiconductor Corp

美國中央半導體

CMSD6001A

SURFACEMOUNTLOWLEAKAGESILICONSWITCHINGDIODES

CentralCentral Semiconductor Corp

美國中央半導體

CMSD6001A

SURFACEMOUNTULTRALOWLEAKAGESILICONSWITCHINGDIODES

CentralCentral Semiconductor Corp

美國中央半導體

CMSD6001C

SURFACEMOUNTLOWLEAKAGESILICONSWITCHINGDIODES

CentralCentral Semiconductor Corp

美國中央半導體

CMSD6001C

SURFACEMOUNTULTRALOWLEAKAGESILICONSWITCHINGDIODES

CentralCentral Semiconductor Corp

美國中央半導體

CMSD6001S

SURFACEMOUNTLOWLEAKAGESILICONSWITCHINGDIODES

CentralCentral Semiconductor Corp

美國中央半導體

CMSD6001S

SURFACEMOUNTULTRALOWLEAKAGESILICONSWITCHINGDIODES

CentralCentral Semiconductor Corp

美國中央半導體

CMUDW6001

SURFACEMOUNTULTRALOWLEAKAGESILICONSWITCHINGDIODE

75V,250mAUltraLowLeakageSwitchingDiodeintheSOT-523Wpackage CentralSemiconductor’sCMUDW6001isa75V,250mAultralowleakagediodepackagedintheSOT-523Wsurfacemountcase.TheSOT-523Wwasdesignedwithgull-wingleadsasanalternativetotheflatleadsoftheSOT-523package.Th

CentralCentral Semiconductor Corp

美國中央半導體

CMUDW6001

75V,250mAUltraLowLeakageSwitchingDiodeintheSOT-523Wpackage

CentralCentral Semiconductor Corp

美國中央半導體

CMXD6001

SUPERmini.TRIPLEISOLATEDSURFACEMOUNTLOWLEAKAGESWITCHINGDIODE

DESCRIPTION: TheCENTRALSEMICONDUCTORCMXD6001typecontainsthree(3)IsolatedSiliconSwitchingDiodes,manufacturedbytheepitaxialplanarprocess,epoxymoldedinaSUPERmini?surfacemountpackage,designedforswitchingapplicationsrequiringextremelylowleakage.MarkingcodeisX01.

CentralCentral Semiconductor Corp

美國中央半導體

CPH6001

High-FrequencyLow-NoiseAmplifierApplications

Features ?Highgain:|S21e|2=11dBtyp(f=1GHz). ?Highcutofffrequency:fT=6.7GHztyp. ?Smallandslim6-pinpackage. ?Largeallowablecollectordissipation(800mWmax).

SANYOSanyo Semicon Device

三洋三洋電機株式會社

CPH6001A

NPNEpitaxialPlanarSiliconTransistorHigh-FrequencyLow-NoiseAmplifierApplications

Features ?Highgain:|S21e|2=11dBtyp(f=1GHz) ?Highcut-offfrequency:fT=6.7GHztyp ?Smallandslim6-pinpackage ?Largeallowablecollectordissipation(800mWmax)

SANYOSanyo Semicon Device

三洋三洋電機株式會社

CPH6001A

RFTransistor

Features ?Highgain:|S21e|2=11dBtyp(f=1GHz) ?Highcut-offfrequency:fT=6.7GHztyp ?Smallandslim6-pinpackage ?Largeallowablecollectordissipation(800mWmax)

ONSEMION Semiconductor

安森美半導體安森美半導體公司

CPH6001A

High-FrequencyLow-NoiseAmplifierApplications

SANYOSanyo Semicon Device

三洋三洋電機株式會社

CPH6001A-TL-E

RFTransistor

Features ?Highgain:|S21e|2=11dBtyp(f=1GHz) ?Highcut-offfrequency:fT=6.7GHztyp ?Smallandslim6-pinpackage ?Largeallowablecollectordissipation(800mWmax)

ONSEMION Semiconductor

安森美半導體安森美半導體公司

CTS6001

InGaP/GaAsRFICAMPLIFIER

TELEDYNE

Teledyne Technologies Incorporated

D6001N

RectifierDiode

RectifierDiode

eupec

eupec GmbH

D6001N

Fullblockingcapability50/60Hzoverawidetemperaturerange

KeyParameters ??VRRM5000V ??IFAVM5790A(TC=100°C) ??IFSM3570A(T118000AC=55°C) ??VT00,674V ??rT0,104m? ??RthJC4,5K/kW ??ClampingForce63…91kN ??Max.Diameter151,5mm ??ContactDiameter100mm ??Height26mm Features ?Fullblockingcapability50/60Hzover

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

DA6001

HighlyintegratedpowerandClocksupplyICfornew

Dialog

Dialog Semiconductor

供應商型號品牌批號封裝庫存備注價格
Central Semiconductor Corp
24+
TO-236-3,SC-59,SOT-23-3
30000
二極管-分立半導體產(chǎn)品-原裝正品
詢價
CENTRALSEMICONDUCTOR
21+
NA
18000
只做原裝,假一罰十
詢價
CENTRALSEMICONDUCTOR
24+
NA
198000
原裝現(xiàn)貨,專業(yè)配單專家
詢價
CENTRALSEMICONDUCTOR
21+
NA
183000
只做原裝,一定有貨,不止網(wǎng)上數(shù)量,量多可訂貨!
詢價
CENTRALSEMICONDUCTOR
21+
NA
12820
只做原裝,質(zhì)量保證
詢價
CENTRALSEMICONDUCTOR
22+
N/A
18000
現(xiàn)貨,原廠原裝假一罰十!
詢價
CENTRALSEMICONDUCTOR
23+
NA
25630
原裝正品
詢價
CENTRALSEMICONDUCTOR
22+
NA
99181
鄭重承諾只做原裝進口貨
詢價
CENTRALSEMICONDUCTOR
22+
NA
21000
原廠原包裝。假一罰十??砷_13%增值稅發(fā)票。
詢價
CENTRALSEMICONDUCTOR
22+
NA
18000
原裝正品優(yōu)勢現(xiàn)貨
詢價
更多CMPD6001STRPBFREE供應商 更新時間2025-1-16 17:17:00