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CMT02N60GN220中文資料虹冠數(shù)據(jù)手冊PDF規(guī)格書
CMT02N60GN220規(guī)格書詳情
GENERAL DESCRIPTION FEATURES
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage
transients.
FEATURES
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSSand VDS(on) Specified at Elevated Temperature
產(chǎn)品屬性
- 型號：
CMT02N60GN220
- 功能描述：
POWER FIELD EFFECT TRANSISTOR
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
CHAMP |
23+ |
原廠原包 |
19960 |
只做進(jìn)口原裝 終端工廠免費(fèi)送樣 |
詢價(jià) | ||
CET |
22+ |
TO- |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) | ||
CET/華瑞 |
23+ |
TO- |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
CET |
22+ |
TO- |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
CHAMPION |
23+ |
TO252 |
28888 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種 |
詢價(jià) | ||
虹冠(臺灣) |
23+ |
TO-220F |
4000 |
正品原裝貨價(jià)格低 |
詢價(jià) | ||
CET |
24+ |
TO- |
12300 |
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證 |
詢價(jià) | ||
CET |
23+ |
TO- |
6000 |
原裝正品，支持實(shí)單 |
詢價(jià) |
