零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
N-Channel30-V(D-S)MOSFET | DINTEK DinTek Semiconductor Co,.Ltd | DINTEK | ||
N-Channel30-V(D-S)MOSFETHalogen-free | DINTEK DinTek Semiconductor Co,.Ltd | DINTEK | ||
TrenchFET?PowerMOSFET | DINTEK DinTek Semiconductor Co,.Ltd | DINTEK | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | ||
40A03VNChannelMosfet | FCIFirst Components International 戈采戈采企業(yè)股份有限公司 | FCI | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | ETLE-Tech Electronics LTD 亞歷電子亞歷電子有限公司 | ETL | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET BVDSS30V RDS(ON)17m? ID40A Description TheGE40N03providethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsandsuite | GTM 勤益投資控股股份有限公司 | GTM | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET BVDSS30V RDS(ON)21m? ID36A Description TheGI40N03providethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.Thethrough-holeversion(TO-251)isavailableforlow-profileapplicationsandsuitedforlowv | GTM 勤益投資控股股份有限公司 | GTM | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | GTM 勤益投資控股股份有限公司 | GTM | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET BVDSS30V RDS(ON)17m? ID40A Description TheGU40N03providethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-263packageisuniversallypreferredforallcommercial-industrialsurfacemountapplicat | GTM 勤益投資控股股份有限公司 | GTM | ||
N-ChannelEnhancement-ModeMOSFET(25V,40A) Features ?RDS(on)=16m?@VGS=10V,ID=20A ?RDS(on)=25m?@VGS=4.5V,ID=20A ?Advancedtrenchprocesstechnology ?HighDensityCellDesignforUltraLowOn-Resistance ?SpeciallyDesignedforDC/DCConvertersandMotorDrivers ?FullyCharacterizedAvalancheVoltageandCurrent ?ImprovedShoo | HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司 | HSMC | ||
N-CHANNELPowerMOSFET FEATURES ?LowONResistance ?LowGateCharge ?PeakCurrentvsPulseWidthCurve ?InductiveSwitchingCurves APPLICATION ?FastSwitching ?SimpleDriveRequirement ?LowGateCharge | SUNTAC Suntac Electronic Corp. | SUNTAC | ||
N-CHANNELPowerMOSFET [magic-matsu] | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | ETC1 | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=45A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=16.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
FUJITSU/富士通 |
23+ |
TO-220F |
69820 |
終端可以免費(fèi)供樣,支持BOM配單! |
詢價(jià) | ||
C |
23+ |
TO-251 |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
C |
22+ |
TO-251 |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
VB |
TO-251 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
C |
23+ |
TO-251 |
6000 |
原裝正品,支持實(shí)單 |
詢價(jià) | ||
C |
22+ |
TO-251 |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) | ||
Cmos/鍦烘晥搴斿崐瀵間綋 |
23 |
TO-251A |
100000 |
N鍦? |
詢價(jià) | ||
Cmos/廣東場(chǎng)效應(yīng) |
1年內(nèi) |
TO-251 |
150000 |
原廠FAE技術(shù)支持 共奕芯城一站式電子元器件采購平臺(tái)支 |
詢價(jià) | ||
Cmos(廣東場(chǎng)效應(yīng)半導(dǎo)體) |
23+ |
TO251 |
6000 |
誠信服務(wù),絕對(duì)原裝原盤 |
詢價(jià) | ||
24+ |
N/A |
51000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) |
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