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IRF6616

DirectFETPowerMOSFET

Description TheIRF6616combinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievelowcombinedon-stateandswitchinglossinapackagethathasthefootprintareaofanSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexis

IRF

International Rectifier

IRF6616PBF

RoHScompliantcontainingnoleadorbormide

Description TheIRF6616combinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievelowcombinedon-stateandswitchinglossinapackagethathasthefootprintareaofanSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexis

IRF

International Rectifier

IRF6616PBF

RoHScompliantcontainingnoleadorbormide

Description TheIRF6616combinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievelowcombinedon-stateandswitchinglossinapackagethathasthefootprintareaofanSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexis

IRF

International Rectifier

IRF6616TRPBF

BenchmarkMOSFETsProductSelectionGuide

IRF

International Rectifier

IRF6616TRPBF

RoHScompliantcontainingnoleadorbormide

Description TheIRF6616combinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievelowcombinedon-stateandswitchinglossinapackagethathasthefootprintareaofanSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexis

IRF

International Rectifier

IRF6616TRPBF

RoHScompliantcontainingnoleadorbormide

Description TheIRF6616combinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievelowcombinedon-stateandswitchinglossinapackagethathasthefootprintareaofanSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexis

IRF

International Rectifier

MAX6616AEG

Dual-ChannelTemperatureMonitorsandFan-SpeedControllerswithThermistorInputs

MaximMaxim Integrated Products

美信美信半導體

MCH6616

Ultrahigh-SpeedSwitchingApplications

N-ChannelSiliconMOSFET Features ?LowON-resistance. ?Ultrahigh-speedswitching. ?2.5Vdrive. ?Compositetypewith2MOSFETscontainedinasingle package,facilitatinghigh-densitymounting.

SANYOSanyo Semicon Device

三洋三洋電機株式會社

NAS6616

BOLT,HEXHEAD,CLOSETOLERANCE,ALLOYSTEELSHORTTHREAD

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

NAS6616

NATIONALAEROSPACESTANDARD

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

STR-F6616

SMPSPRIMARYIC

SankenSanken electric

三墾三墾電氣株式會社

STR-F6616

SMPSPRIMARYIC

TheSeriesSTR-F6600isspecificallydesignedtosatisfytherequirementsforincreasedintegrationandreliabilityinoff-linequasi-resonantflybackconverters.Theseriesincorporatesaprimarycontrolanddrivecircuitwithdiscreteavalanche-ratedpowerMOSFETs. Coveringthepowerrangefrom

SankenSanken electric

三墾三墾電氣株式會社

詳細參數(shù)

  • 型號:

    CPH6616-TL-E

  • 功能描述:

    MOSFET N-CH DUAL 30V 2.5A CPH6

  • RoHS:

  • 類別:

    分離式半導體產(chǎn)品 >> FET - 陣列

  • 系列:

    -

  • 產(chǎn)品目錄繪圖:

    8-SOIC Mosfet Package

  • 標準包裝:

    1

  • 系列:

    - FET

  • 型:

    2 個 N 溝道(雙) FET

  • 特點:

    邏輯電平門

  • 漏極至源極電壓(Vdss):

    60V 電流 - 連續(xù)漏極(Id) @ 25°

  • C:

    3A 開態(tài)Rds(最大)@ Id, Vgs @ 25°

  • C:

    75 毫歐 @ 4.6A,10V Id 時的

  • Vgs(th)(最大):

    3V @ 250µA 閘電荷(Qg) @

  • Vgs:

    20nC @ 10V 輸入電容(Ciss) @

  • Vds:

    - 功率 -

  • 最大:

    1.4W

  • 安裝類型:

    表面貼裝

  • 封裝/外殼:

    PowerPAK? SO-8

  • 供應商設備封裝:

    PowerPAK? SO-8

  • 包裝:

    Digi-Reel®

  • 產(chǎn)品目錄頁面:

    1664(CN2011-ZH PDF)

  • 其它名稱:

    SI7948DP-T1-GE3DKR

供應商型號品牌批號封裝庫存備注價格
SANYO/三洋
2019+PB
CPH-6
99200
原裝正品 可含稅交易
詢價
SANYO/三洋
24+
CPH6
7906200
一站配齊,原盒原包現(xiàn)貨原廠一手渠道聯(lián)系
詢價
Sanyo
23+
CPH6
7750
全新原裝優(yōu)勢
詢價
SANYO
24+
SOT23-6
5000
全現(xiàn)原裝公司現(xiàn)貨
詢價
SANYO
1742+
SOT23-6
98215
只要網(wǎng)上有絕對有貨!只做原裝正品!
詢價
ON
23+
SOT-163
63000
原裝正品現(xiàn)貨
詢價
三年內(nèi)
1983
只做原裝正品
詢價
SANYO
19+
CPH6
200000
詢價
SANYO/三洋
20+
SOT23-6
49000
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
SANYO
2023+
CPH6
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
更多CPH6616-TL-E供應商 更新時間2024-12-24 10:00:00