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CRCW06030000FKEA中文資料恩智浦?jǐn)?shù)據(jù)手冊(cè)PDF規(guī)格書

CRCW06030000FKEA
廠商型號(hào)

CRCW06030000FKEA

功能描述

Heterojunction Bipolar Transistor Technology (InGaP HBT)

文件大小

389.12 Kbytes

頁面數(shù)量

14

生產(chǎn)廠商 NXP Semiconductors
企業(yè)簡(jiǎn)稱

nxp恩智浦

中文名稱

恩智浦半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-1-7 17:25:00

CRCW06030000FKEA規(guī)格書詳情

0--6000 MHz, 15.5 dB 20.5 dBm InGaP HBT GPA

The MMG3015NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A, small-signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6000 MHz such as cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF.

Features

● Frequency: 0--6000 MHz

● P1dB: 20.5 dBm @ 900 MHz

● Small--Signal Gain: 15.5 dB @ 900 MHz

● Third Order Output Intercept Point: 36 dBm @ 900 MHz

● Single 5 V Supply

● Active Bias Control

● Internally Matched to 50 Ohms

● Cost--effective SOT--89 Surface Mount Plastic Package

● In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.

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